Resist Composition for EUV Lithography
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Solution Overview
Problem
EUV lithography resist materials face challenges in achieving high sensitivity, resolution, and low line width roughness (LWR) and critical dimension uniformity (CDU) due to the tradeoff between sensitivity and acid diffusion, with existing methods either reducing sensitivity or increasing LWR and CDU.
Innovation Solution
A resist composition comprising a 2,5,8,9-tetraaza-1-phosphabicyclo[3.3.3]undecane, biguanide or phosphazene salt of tetraiodophenolphthalein, tetraiodophenolsulfonphthalein, or tetraiodofluorescein, which enhances sensitization through secondary electron generation while suppressing acid diffusion, thereby improving resolution and uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the acid diffusion distance is reduced to improve LWR, then sensitivity becomes lower
Solution Approach 1:
The patent applies local quality by creating distinct functional zones within the resist composition: a quencher component that locally traps acid near the exposure site to reduce diffusion and improve LWR, while maintaining high sensitivity through localized acid generation. This spatial differentiation of functions allows simultaneous optimization of both LWR and sensitivity.
Solution Approach 2:
The patent uses composite materials by combining multiple components in the resist formulation: phthalein-based compounds for high sensitivity and resolution, quencher compounds for acid diffusion control, and base polymers for film formation. This composite approach enables the system to achieve both high sensitivity and low LWR by leveraging the complementary properties of each component.
2Manufacturing precision
If the PEB temperature is lowered to reduce LWR, then sensitivity becomes lower
Solution Approach 1:
The patent applies parameter changes by optimizing the PEB temperature parameter within a specific range (90-110°C) to simultaneously achieve low LWR and high sensitivity. This precise parameter control, combined with the quencher component, allows the system to suppress acid diffusion without requiring excessive temperature reduction that would harm sensitivity.
Solution Approach 2:
The quencher acts as an intermediary that mediates between the acid generation and the final pattern formation. It intercepts excess acid and prevents over-diffusion, allowing the process to achieve low LWR at moderate PEB temperatures without sacrificing sensitivity, as the quencher compensates for acid diffusion that would otherwise occur.
3Manufacturing precision
If the amount of quencher added is increased to reduce LWR, then sensitivity becomes lower
Solution Approach 1:
The patent applies partial action by adding a controlled, optimized amount of quencher that is sufficient to suppress acid diffusion and improve LWR, but not excessive enough to neutralize all generated acid and harm sensitivity. This balanced approach achieves the desired LWR reduction while maintaining high sensitivity through precise dosage control.
Solution Approach 2:
The patent uses parameter changes by optimizing the quencher concentration parameter to a specific range that simultaneously achieves low LWR and high sensitivity. This quantitative optimization allows the system to find the sweet spot where quencher amount is sufficient for LWR control but not excessive to the point of reducing sensitivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves high sensitivity, minimal LWR, and improved CDU by effectively managing acid diffusion and maintaining high dissolution contrast, suitable for both positive and negative resist films.
Implementation Method 1
enhances sensitization through secondary electron generation
Implementation Method 2
suppressing acid diffusion
Data Source
AI summary
A resist composition comprising a 2,5,8,9-tetraaza-1-phosphabicyclo[3.3.3]undecane, biguanide or phosphazene salt of tetraiodophenolphthalein, tetraiodophenolsulfonphthalein or tetraiodofluorescein exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.