Resist Composition for EUV Lithography with Enhanced Etching Resistance
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Solution Overview
Problem
As lithography technology advances and resist pattern miniaturization progresses, existing resist compositions face challenges in achieving sufficient etching resistance and high sensitivity, particularly when forming patterns in the range of several tens of nanometers using EUV and EB.
Innovation Solution
A resist composition that generates an acid upon light exposure, with a resin component (A1) whose solubility in a developing solution is changed by an acid action. This component includes a constitutional unit derived from a compound represented by General Formula (a0-1), which enhances the solubility change and improves lithography characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the film thickness of the resist film is decreased to enable further pattern miniaturization, then the resolution for forming fine patterns is improved, but the etching resistance deteriorates
Solution Approach 1:
The patent modifies the chemical structure of the resin component by introducing specific constitutional units with formula (a0-1) that contain acid-dissociable groups and hydrocarbon groups. This structural parameter change enables the resist film to maintain adequate etching resistance even at reduced film thicknesses of 20 nm or less, while still achieving the required pattern miniaturization
2Manufacturing precision
If the film thickness of the resist film is decreased to enable further pattern miniaturization, then the resolution for forming fine patterns is improved, but the sensitivity to radiation deteriorates
Solution Approach 1:
The patent optimizes the chemical composition parameters of the resin by incorporating constitutional units with specific structures (formula a0-1) that balance solubility change upon acid generation with adequate radiation sensitivity. The acid-dissociable groups in the constitutional units enable sufficient solubility contrast for high sensitivity detection, while the overall molecular structure maintains the required sensitivity even in ultra-thin films
Solution Approach 2:
The resist composition uses a composite resin structure combining multiple constitutional units including those with formula (a0-1) that contain both acid-dissociable groups and hydrocarbon groups. This composite structure integrates the functions of radiation sensitivity (through acid generation) and solubility contrast (through acid-dissociable groups), achieving both high sensitivity and pattern miniaturization capability
3Ease of manufacture
If conventional resist compositions are used, then the manufacturing process is simple, but the etching resistance and sensitivity are insufficient for further pattern miniaturization
Solution Approach 1:
The patent modifies the chemical parameters of the resin component by incorporating constitutional units with formula (a0-1) that contain acid-dissociable groups and hydrocarbon groups in specific ratios. This parameter optimization enables conventional chemically amplified resist processes to achieve enhanced etching resistance and sensitivity without fundamentally changing the manufacturing workflow
Solution Approach 2:
The patent introduces specific constitutional units with formula (a0-1) that have localized acid-dissociable groups and hydrocarbon groups at strategic positions in the molecular structure. This local structural modification provides enhanced etching resistance and sensitivity at the molecular level while maintaining the overall simplicity of the resist composition formulation and application process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves enhanced etching resistance and high sensitivity, enabling the formation of fine resist patterns with improved film thickness and pattern reproduction capabilities.
Implementation Method 1
a chemically amplified resist composition containing a base material component whose solubility in a developing solution is changed by an action of an acid and an acid generation agent component that generates an acid upon light exposure
Data Source
AI summary
A resist composition containing a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1) in which W01 represents a polymerizable group-containing group; RAr represents an aromatic group; Ra0 represents an acid dissociable group represented by General Formula (a0-r-1); Ra01 represents an aliphatic hydrocarbon group; Ra02, Ra03, and Ra04 represent a hydrocarbon group or a hydrogen atom; Ra01 and Ra02 may be bonded to each other to form an alicyclic structure; Ra03 and Ra04 may be bonded to each other to form an aromatic ring structure or an alicyclic structure. The alicyclic structure formed by Ra01 and Ra02 are bonded to each other and the aromatic ring structure or the alicyclic structure formed by Ra03 and Ra04 are bonded to each other or may be condensed to each other; and Ra05 represents a chain-like or alicyclic hydrocarbon group or a hydrogen atom