Resist Composition for EUV Lithography Pattern Formation
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Solution Overview
Problem
Current pattern formation methods in ultra fine regions (e.g., line widths of 50 nm or less) face challenges in achieving high sensitivity, high resolution, low film loss, high exposure latitude, and high dry etching resistance simultaneously.
Innovation Solution
A pattern formation method using an active light-sensitive or radiation-sensitive resin composition containing specific repeating units, exposed to active light or radiation, and developed with an organic solvent-based developer, which includes a resin with phenolic hydroxyl groups and cross-linking groups like hydroxymethyl or oxirane rings, enhancing sensitivity and resolution while reducing film loss and improving dry etching resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If sensitivity is improved by using chemical amplification positive resist composition, then sensitivity increases, but pattern shape and resolving power decrease
Solution Approach 1:
The patent uses a composite resist composition containing both phenolic resin (insoluble in alkali developer) and carboxylic acid resin (soluble in alkali developer), along with multiple photoacid generators. This composite structure enables the resist to achieve high sensitivity through chemical amplification while maintaining good pattern shape and resolving power by balancing the properties of different resin components.
Solution Approach 2:
The patent optimizes the molecular weight, composition ratio, and structural parameters of the phenolic resin and carboxylic acid resin components. Specifically, it controls the weight average molecular weight of phenolic resin within 10,000-100,000 and carboxylic acid resin within 1,000-10,000, and sets their composition ratio to 90:10 to 50:50 by weight. These parameter optimizations enable simultaneous achievement of high sensitivity and high resolving power.
2Length of moving object
If ultra fine patterns are formed in sub-micron or quarter-micron region, then line width decreases, but exposure wavelength must be shortened and processing complexity increases
Solution Approach 1:
The patent uses extreme ultraviolet (EUV) radiation with wavelength of 13 nm, which is significantly shorter than conventional exposure wavelengths. This enables the formation of ultra fine patterns with line widths of 50 nm or less. The patent also optimizes the resist composition parameters including phenolic resin molecular weight (10,000-100,000) and carboxylic acid resin molecular weight (1,000-10,000) to achieve high sensitivity and resolution at this wavelength.
3Loss of time
If high sensitivity is achieved, then wafer processing time is shortened, but pattern shape and resolving power deteriorate
Solution Approach 1:
The patent employs a composite resist system containing phenolic resin, carboxylic acid resin, and multiple photoacid generators (including onium salts and metal complexes). This composite structure provides high sensitivity for rapid processing while the specific composition ratios and molecular weight controls maintain excellent pattern shape and resolving power, eliminating the traditional trade-off between speed and quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves high sensitivity, high resolution, low film loss, and improved dry etching resistance in ultra fine regions, enabling the formation of precise patterns with enhanced exposure latitude.
Implementation Method 1
exposing the film to active light or radiation
Implementation Method 2
exposing the film to active light or radiation
Implementation Method 3
a phenolic resin which is insoluble or poorly soluble in an alkali developer, and has properties of becoming soluble by the action of an acid
Data Source
AI summary
There are provided A pattern formation method, including:(1) forming a film using an active light-sensitive or radiation-sensitive resin composition;(2) exposing the film to active light or radiation; and(3) developing the exposed film using a developer including an organic solvent,wherein the active light-sensitive or radiation-sensitive resin composition contains a resin (A) having specific 3 repeating units.