Resist Composition for EUV Lithography Pattern Quality
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Solution Overview
Problem
Conventional resist compositions with onium salt acid generators face challenges in achieving desired resist pattern shapes and sensitivity, especially when enhanced for EUV exposure, struggling to balance sensitivity and pattern quality.
Innovation Solution
A resist composition that includes a resin component with a specific structural unit and an acid generator component, where the resin component has a polymerizable group within its main chain, and the acid generator component is represented by a specific formula, enhancing sensitivity and lithography properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional onium salt acid generators are used in resist composition, then the resist can form patterns, but the sensitivity and pattern shape quality deteriorate when enhanced for EUV exposure
Solution Approach 1:
The patent changes the chemical parameters of the acid generator by using specific compounds (tricyclohexylsulfonium trifluoromethanesulfonate and tricyclohexylsulfonium p-toluenesulfonate) with defined structural characteristics. This parameter change in the acid generator composition enables simultaneous achievement of high sensitivity and good pattern shape quality for EUV lithography, resolving the contradiction between sensitivity and pattern quality.
2Reliability
If the resist composition is optimized for higher sensitivity, then exposure response improves, but the resist pattern shape retention worsens
Solution Approach 1:
The patent employs a composite resist system combining specific resin components (polymer with structural units containing aromatic hydrocarbon groups and carboxyl groups) with specific acid generators. This composite material approach creates synergistic effects where the resin provides structural integrity for pattern shape retention while the acid generator ensures high sensitivity, thus resolving the contradiction between sensitivity and pattern shape retention.
3Adaptability or versatility
If conventional resist materials are used, then existing process compatibility is maintained, but lithography properties for minute dimension patterns deteriorate
Solution Approach 1:
The patent applies local quality by incorporating specific functional groups (carboxyl groups with pKa 3-7) at critical locations within the resin structure. These localized functional groups provide acid-base reactions that enhance lithography properties for minute dimension patterns while the overall resin structure maintains process compatibility with existing fabrication processes.
Data Source
AI summary
A resist composition including a polymeric compound having a structural unit in which a compound represented by formula (a0-1) has a polymerizable group within the W1 portion converted into a main chain, and a compound represented by formula (b1-1) in which W1 represents a polymerizable group-containing group; Ct represents a tertiary carbon atom, and the α-position of Ct is a carbon atom which constitutes a carbon-carbon unsaturated bond; R11 represents an aromatic hydrocarbon group or a chain hydrocarbon group; R12 and R13 are mutually bonded to form a 5-membered aliphatic monocyclic group, or a condensed polycyclic hydrocarbon group containing a 5-membered aliphatic monocyclic ring; Rb11 represents a cyclic group; Rb10, Rb20 and Rb30 each independently represents a substituent; nb1 represents an integer of 0 to 4; nb2 represents an integer of 0 to 5; nb3 represents an integer of 0 to 5; and X− represents a counteranion.