Resist Composition for EUV Lithography Resolution and Roughness
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Solution Overview
Problem
Current resist compositions face challenges in achieving satisfactory sensitivity, resolution, and roughness characteristics, especially when forming fine patterns with sizes in the range of several tens of nanometers using EUV and EB lithography.
Innovation Solution
A resist composition is developed that includes a resin component (A1) with constitutional units derived from specific compounds, such as those represented by General Formula (a0-1), and containing lactone, —SO2—, or carbonate-containing cyclic groups. This composition generates an acid upon light exposure, altering its solubility in a developing solution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a chemically amplified resist composition is used to improve sensitivity and resolution, then lithography characteristics are improved, but achieving satisfactory roughness characteristics becomes difficult
Solution Approach 1:
The patent uses a composite resin system comprising multiple resin components (A1, A2, B) with different functional groups and molecular structures. Resin A1 contains cyclic carbonate groups, resin A2 contains carboxyl groups, and resin B contains hydroxyl groups. This composite approach allows the resist to achieve both high resolution through acid-catalyzed reactions and smooth roughness through synergistic interactions between different resin components, resolving the contradiction between resolution and roughness
2Length of moving object
If the resist pattern size is reduced to several tens of nanometers, then pattern miniaturization is achieved, but it becomes difficult to improve sensitivity, resolution, and roughness without trade-offs
Solution Approach 1:
The patent employs precise control of molecular weight parameters (Mc: 5,000-50,000 for resin A1, Mg: 10,000-100,000 for resin A2) and compositional ratios (A1: 5-80 wt%, A2: 5-80 wt%, B: 1-50 wt%). These parameter optimizations enable the resist to maintain excellent lithography characteristics including sensitivity, resolution, and roughness even at ultra-fine pattern dimensions of several tens of nanometers, eliminating the need for trade-offs
3Measurement precision
If a resin with multiple constitutional units is used to improve lithography characteristics, then sensitivity and resolution are enhanced, but the complexity of the resist composition increases
Solution Approach 1:
The patent divides the resist system into distinct functional segments: resin A1 providing cyclic carbonate units for acid-catalyzed reactions, resin A2 providing carboxyl groups for solubility modulation, and resin B providing hydroxyl groups for film formation. Each resin component has a specific molecular weight range and functional role. This segmentation allows for systematic optimization of each component's contribution to lithography performance while maintaining overall compositional simplicity and processability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves improved sensitivity, resolution, and roughness characteristics, enabling the formation of fine resist patterns without compromising these lithography characteristics.
Implementation Method 1
a chemically amplified resist composition containing a base material component whose solubility in a developing solution is changed by an action of an acid and an acid generator component that generates an acid upon light exposure
Data Source
AI summary
A resist composition including a resin component which has a constitutional unit derived from a compound represented by General Formula (a0-1) below and a constitutional unit containing a lactone-containing cyclic group. In General Formula (a0-1), W01 represents a polymerizable group-containing group, Ya01 represents a single bond or a divalent linking group, Ra01 represents an acid dissociable group, q represents an integer of 0 to 3, n represents an integer of 1 or greater and n≤q×2+4 is satisfied