Resist Composition Film Thickness Wet Etching Resolution
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Resist compositions using alkali-soluble polyhydroxystyrene-based resins for thick films exhibit insufficient wet etching resistance, while those using novolak resins have resolution issues during resist pattern formation.
Innovation Solution
A resist composition comprising a polymeric compound with a specific constitutional unit, an acid generator, a crosslinking agent, and a polyether compound, where the polyether content is less than 50 parts by mass per 100 parts of the polymeric compound, forming a film that enhances both resolution and wet etching resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If alkali-soluble polyhydroxystyrene-based resin is used for thick resist film, then film thickness can be increased, but wet etching resistance becomes insufficient
Solution Approach 1:
The patent uses a composite resin system combining polyhydroxystyrene-based resin with specific crosslinking agents (melamine, urea, or their derivatives) to create a resist composition that maintains both thick film capability and wet etching resistance. The crosslinked network structure provides mechanical strength and chemical resistance while preserving the solubility characteristics needed for pattern formation.
2Volume of moving object
If novolak resin is used for thick resist film, then film thickness can be increased, but resolution becomes insufficient
Solution Approach 1:
The patent modifies the chemical composition parameters of the resist system by introducing specific crosslinking agents and controlling the molecular weight and composition ratio of the polyhydroxystyrene-based resin. This parameter optimization enables the resist to achieve both thick film formation and high resolution by adjusting the balance between film-forming properties and pattern-definition properties.
3Reliability
If crosslinking agent is added to resist composition, then wet etching resistance improves, but resolution may deteriorate
Solution Approach 1:
The patent applies crosslinking agents selectively and controls their distribution within the resist film. The crosslinking density is optimized to provide sufficient wet etching resistance in the bulk while maintaining adequate resolution characteristics at the pattern interfaces. The specific choice of crosslinking agents (melamine, urea, or derivatives) ensures localized crosslinking that enhances resistance without excessive network formation that would harm resolution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables the formation of resist patterns with improved resolution and wet etching resistance, maintaining good adhesiveness to the substrate interface.
Implementation Method 1
an acid generator component that generates acid upon exposure
Implementation Method 2
a base material component that exhibits changed solubility in a developing solution under action of acid
Implementation Method 3
the acid acts to cause crosslinking between the alkali-soluble base material component and the crosslinking agent component
Data Source
AI summary
A resist composition containing a polymeric compound having a constitutional unit containing a phenolic hydroxyl group, an acid generator, at least one crosslinking agent among a melamine-based crosslinking agent, a urea-based crosslinking agent, an alkylene urea-based crosslinking agent, a glycoluril-based crosslinking agent, and an epoxy-based crosslinking agent, and a polyether compound, a content of which is less than 50 parts by mass with respect to 100 parts by mass of the polymeric compound.