Chemically Amplified Resist Composition for High-Sensitivity Fine Patterning
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Solution Overview
Problem
Existing resist compositions struggle to achieve high sensitivity and improved lithography characteristics, particularly in forming minute patterns with sizes of several tens of nanometers using extreme ultraviolet rays or electron beams, requiring further enhancement in sensitivity and roughness reduction.
Innovation Solution
A resist composition that generates an acid upon light exposure, featuring a resin component with a constitutional unit derived from a compound represented by General Formula (a0-m), which changes solubility in a developing solution due to acid action, and includes a photodecomposable base to trap acids, enhancing development contrast.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a chemically amplified resist composition is used to achieve high sensitivity, then sensitivity is improved, but lithography characteristics such as roughness are worsened
Solution Approach 1:
The patent divides the base material component into multiple resin components with distinct functions: resin component (A1) containing constitutional units (a0) that change solubility upon acid action provides sensitivity, while resin component (A2) acts as an acid diffusion control agent to manage acid spread. This segmentation allows each component to optimize its specific function, resolving the contradiction between high sensitivity and controlled acid diffusion for better lithography characteristics.
Solution Approach 2:
The patent employs a composite resist composition combining multiple resin components (A1 and A2) with an acid generator. The composite structure integrates materials with complementary properties: (A1) provides the necessary solubility change for sensitivity, while (A2) controls acid diffusion to maintain pattern fidelity. This composite approach enables simultaneous achievement of high sensitivity and improved lithography characteristics.
2Manufacturing precision
If the wavelength of exposure light source is shortened to enable pattern miniaturization, then resolution is improved, but sensitivity is worsened
Solution Approach 1:
The patent utilizes parameter changes in the resin component (A1), specifically the solubility parameter that changes upon acid action. The constitutional units (a0) are designed to undergo significant solubility changes when exposed to short-wavelength light that generates acid. This parameter change mechanism enables the resist to maintain high sensitivity even with shortened exposure wavelengths, while achieving the required pattern resolution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves higher sensitivity and improved lithography characteristics, such as reduced roughness, through solubility changes in both alkali and solvent developing processes, facilitating the formation of precise resist patterns.
Implementation Method 1
a chemically amplified resist composition containing a base material component whose solubility in a developing solution is changed by an action of an acid and an acid generator component that generates an acid upon light exposure
Implementation Method 2
a photodecomposable base to trap acids, enhancing development contrast
Data Source
AI summary
A resist composition in which a polymer compound having a constitutional unit derived from a compound represented by General Formula (a0-m) is used as a base resin. In the formula, W represents a polymerizable group-containing group; RAr1 and RAr2 represent an aromatic group; R01 and R02 represent an iodinated alkyl group, an iodine atom, or a hydrogen atom; L11 to L15 represent a linking group; q represents 0 or 1; when q represents 0, R02 represents an iodinated alkyl group or an iodine atom, and j2 represents an integer of 1 to 5; when q represents 1, the number of iodine atoms in R01 and R02 is 1 or more; and k1 and k2 represent 0 or 1; when q represents 0, k2 represents 1; when q represents 1, k1+k2 is 1; and Mm+ represents an m-valent onium cation.