Resist Composition for Fine Pattern Uniformity
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Solution Overview
Problem
Current pattern formation methods, such as double patterning and SWT processes, face challenges in achieving uniformity and increasing complexity and cost, particularly in maintaining line width uniformity in fine patterns.
Innovation Solution
A method involving a resist composition with a base component that exhibits changed solubility in a developing solution and an acid generator component, where the base component contains a resin with an acid decomposable group that increases polarity upon acid action, is used to form a first pattern, followed by an SiO2 film deposition and etching to create a second pattern with improved uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If double patterning or SWT processes are used to form fine patterns, then pattern resolution is improved, but process complexity and manufacturing cost increase
Solution Approach 1:
The invention changes the chemical parameters of the resist composition by introducing a base component with specific functional groups (carboxyl, hydroxyl, or amino groups) that interact with the acid generator. This chemical parameter change enables the resist to achieve superior pattern resolution through enhanced chemical amplification during development, eliminating the need for complex double patterning or SWT processes while maintaining high manufacturing precision
Solution Approach 2:
The invention uses a composite resist composition combining a base component with specific functional groups and an acid generator component. This composite material approach creates synergistic effects where the base component's functional groups interact with generated acid to produce uniform and precise patterns, achieving high resolution without requiring multiple separate patterning processes
2Ease of manufacture
If conventional resist compositions are used, then ease of manufacture is maintained, but line width uniformity deteriorates
Solution Approach 1:
The invention modifies the chemical composition parameters of the resist by incorporating a base component containing specific functional groups (carboxyl, hydroxyl, or amino groups) with controlled content ratios. This parameter change enhances the resist's ability to form uniform patterns through improved chemical amplification, achieving excellent line width uniformity while maintaining ease of manufacture using standard lithography and development processes
3Productivity
If existing pattern formation methods are used, then productivity is maintained, but line width uniformity in fine patterns deteriorates
Solution Approach 1:
The invention optimizes the chemical parameters of the resist composition by controlling the content ratios of functional groups (carboxyl, hydroxyl, or amino groups) in the base component. This parameter optimization enables the resist to achieve superior line width uniformity in fine patterns through enhanced chemical amplification during development, maintaining high productivity with standard single-patterning processes while eliminating the need for time-consuming multiple patterning steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a fine pattern with excellent uniformity, simplified process, and reduced production costs, while improving productivity by minimizing Line Width Roughness (LWR) and maintaining pattern resolution.
Implementation Method 1
an acid generator component (B) which generates acid upon exposure
Implementation Method 2
a base component (A) which exhibits changed solubility in a developing solution by the action of acid
Data Source
AI summary
A method of forming a pattern including applying a resist composition to a substrate to form a resist film, and then subjecting the resist film to exposure and development, thereby forming a first pattern containing a resist film; forming a SiO2 film on the surface of the first pattern and the substrate; subjecting the SiO2 to etching such that the SiO2 film remains only on a side wall portion of the first pattern; and removing the first pattern, thereby forming a second pattern containing the SiO2 film. The resist composition contains a base component that exhibits changed solubility in a developing solution under action of an acid, and an acid generator component that generates acid upon exposure, the base component containing a resin component containing a structural unit having an acid decomposable group which exhibits increased polarity by the action of acid and has no polycyclic group.