Resist Composition for High Resolution Lithography
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Solution Overview
Problem
In the formation of resist patterns for semiconductor elements, there is a challenge in achieving high resolution and sensitivity while minimizing film reduction and residue generation, particularly in the use of chemically amplified positive-tone resist compositions where the protection of unexposed resist film portions with acid dissociable groups leads to issues with film thickness and residue at the substrate interface.
Innovation Solution
A resist pattern formation method involving a resist composition that combines a first resin component with a polymeric compound derived from acrylic acid and a second resin component containing phenolic hydroxyl groups and acid-decomposable groups, which together exhibit reduced solubility in alkali developing solutions, allowing for controlled film reduction and minimized residue.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a chemically amplified positive-tone resist composition is used to achieve high sensitivity and resolution, then the lithography characteristics are improved, but film reduction and residue generation occur at the substrate interface
Solution Approach 1:
The resist film is segmented into multiple resin components with different dissolution rate characteristics. The first resin component provides high sensitivity and resolution, while the second resin component suppresses film reduction and residue generation, achieving both lithography precision and manufacturing precision
Solution Approach 2:
Different regions of the resist film exhibit different dissolution behaviors through the use of multiple resin components. The composition creates local quality variations where exposed portions dissolve at controlled rates while unexposed portions maintain structural integrity, preventing both excessive film reduction and residue generation
2Object-generated harmful factors
If the dissolution rate of the resist film is increased to reduce residue, then residue generation is minimized, but film reduction increases
Solution Approach 1:
The dissolution rate parameter is optimized by combining resin components with different dissolution characteristics. This parameter change allows the resist film to exhibit controlled dissolution behavior that minimizes both residue generation and film reduction simultaneously
3Device complexity
If a single resin component is used to simplify the composition, then the device complexity is reduced, but the ability to control both sensitivity and film reduction is compromised
Solution Approach 1:
The resist composition uses a composite material system combining first and second resin components with specific functional characteristics. This composite approach enables reliable pattern formation by leveraging the complementary properties of each resin component, achieving both high sensitivity and controlled film reduction
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables high sensitivity and resolution in resist pattern formation with reduced film reduction and minimal residue generation, even on substrates with height differences, by adjusting the dissolution rates of the mixed resin components in alkali developing solutions.
Implementation Method 1
an acid is generated from the acid generator component, and the deprotection reaction of the protecting group introduced in advance proceeds under the action of the acid
Implementation Method 2
a chemical amplification-type resist composition that contains a base material component that exhibits changed solubility in a developing solution under action of acid
Data Source
AI summary
A resist pattern formation method including forming a resist film on a support by using a resist composition; exposing the resist film; and subjecting the exposed resist film to alkali development to form a positive-tone resist pattern. The resist composition contains a first resin component and a second resin component. The first resin component contains a polymeric compound having a constitutional unit derived from acrylic acid in which a hydrogen atom bonded to a carbon atom at an α-position may be substituted with a substituent, and the second resin component contains a polymeric compound having both a constitutional unit containing a phenolic hydroxyl group and a constitutional unit containing an acid decomposable group having a polarity that is increased under action of acid.