Chemically Amplified Positive Resist Composition for High-Resolution Lithography
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Solution Overview
Problem
Current chemically amplified positive resist compositions for semiconductor microfabrication and circuit board production face challenges in achieving high resolution and good pattern profiles, particularly in lithography processes using i-rays, KrF, ArF, and electron beams, due to limitations in pattern formation and resolution.
Innovation Solution
A novel chemically amplified positive resist composition is developed, comprising a polymer with specific structural units derived from a compound represented by formula (I), which includes a phenyl, naphthyl, or anthryl group, and an acid-labile group, combined with an acid generator and a basic nitrogen-containing organic compound, to enhance pattern resolution and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist compositions are used, then manufacturing process is simple, but pattern resolution and profile quality are insufficient
Solution Approach 1:
The patent employs a composite resist composition comprising a polymer with specific structural units (formula I with aromatic groups and acid-labile groups), acid generator, and basic nitrogen-containing organic compound. This composite approach integrates multiple functional components to achieve high pattern resolution while maintaining processability, directly resolving the contradiction between manufacturing precision and device complexity.
Solution Approach 2:
The patent modifies the chemical structure parameters of the polymer by incorporating specific aromatic hydrocarbon groups (phenyl, naphthyl, anthryl) and acid-labile groups in defined ratios. These parameter changes in molecular structure enhance the resist's chemical amplification efficiency and pattern formation capability, thereby improving pattern resolution without excessive complexity increase.
2Manufacturing precision
If polymer structure is simplified, then ease of manufacture increases, but pattern profile quality deteriorates
Solution Approach 1:
The patent introduces specific local structural units into the polymer chain, including aromatic groups (phenyl, naphthyl, anthryl) and acid-labile groups at controlled ratios (0.1-50 moles per 100 moles of all structural units). These localized functional groups enhance pattern profile quality through selective chemical reactions during lithography, while the base polymer structure remains synthetically accessible.
3Manufacturing precision
If acid-labile group content is increased, then pattern resolution improves, but polymer stability decreases
Solution Approach 1:
The patent optimizes the concentration parameter of acid-labile groups within a specific range (0.1-50 moles per 100 moles of all structural units). This parameter optimization ensures sufficient acid-labile groups for high pattern resolution through chemical amplification, while maintaining polymer stability by preventing excessive cross-linking or degradation. The aromatic groups further stabilize the polymer structure through their inherent chemical stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves high-resolution patterns with improved profile quality, suitable for KrF lithography, ArF lithography, EUV lithography, and electron beam lithography, by optimizing the polymer's structural units and additives, thereby addressing the limitations of existing resist compositions.
Implementation Method 1
a chemically amplified positive resist composition comprising a polymer which comprises a structural unit represented by the formula (I)... and an acid generator
Implementation Method 2
a structural unit having an acid-labile group in its side chain
Data Source
AI summary
A compound represented by the formula (I):wherein R1 represents a hydrogen atom etc., R2 and R3 each independently represent a hydrogen atom etc., R4 represents a C1-C8 divalent hydrocarbon group, R5 represents a single bond etc., and R6 represents an unsubstituted or substituted C6-C20 aromatic hydrocarbon group, a polymer comprising a structural unit derived from the compound represented by the formula (I) and a chemically amplified positive resist composition comprising the polymer, at least one acid generator and at least one solvent.