Resist Composition with Photodegradable Base for Lithography CDU
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Solution Overview
Problem
Current resist compositions for semiconductor and liquid crystal display manufacturing face challenges in achieving satisfactory lithography characteristics, particularly in terms of CDU (Critical Dimension Uniformity), pattern roughness, and shape, with existing technologies falling short in these aspects.
Innovation Solution
A resist composition is developed that includes a resin component with acid-decomposable groups, an acid generator component that produces an acid upon light exposure, and a photodegradable base component with a carboxylic acid of specific pKa values, enhancing the solubility change in developing solutions and improving lithography characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional acid generators are used in chemically amplified resist composition, then the resist composition can achieve basic lithography functionality, but the lithography characteristics such as CDU (Critical Dimension Uniformity), pattern roughness, and shape are unsatisfactory
Solution Approach 1:
The patent changes the chemical parameters of the acid generator component by introducing a specific molecular structure with a cation moiety containing an electron-withdrawing group and a bulky anion moiety. This parameter change in molecular structure optimizes the acid generation characteristics, leading to improved lithography characteristics including better CDU, reduced pattern roughness, and enhanced shape fidelity while maintaining satisfactory sensitivity
Solution Approach 2:
The patent creates a composite resist composition by combining the resin component (A1) with the specifically structured acid generator component (B0) and base component (D0). This composite approach allows the synergistic interaction between components to achieve superior lithography characteristics that cannot be obtained by individual components alone, particularly improving CDU and pattern quality
2Manufacturing precision
If the acid generator component generates acid upon light exposure, then the solubility change in developing solution is achieved, but the pattern shape and CDU are affected negatively
Solution Approach 1:
The patent introduces a base component (D0) with specific properties (carboxylic acid pKa of 0.3 to 2.5, photodegradable) that acts as an intermediary to control and moderate the acid generated by the acid generator component. This intermediary base component regulates acid concentration and distribution, preventing excessive acid that would harm pattern shape and CDU, while still enabling the necessary solubility change for pattern formation
Solution Approach 2:
The patent optimizes the parameters of the acid generator component by introducing specific structural features (electron-withdrawing group in cation moiety, bulky anion moiety) that change the acid generation characteristics. This parameter optimization ensures acid is generated at appropriate concentrations and locations, improving pattern shape and CDU while maintaining the necessary solubility change mechanism
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves improved lithography characteristics, including enhanced CDU, pattern shape, and sensitivity, by selectively altering solubility in response to light exposure, leading to better resist pattern formation.
Implementation Method 1
an acid generator component (B) which generates an acid upon light exposure
Implementation Method 2
a resin component (A1) whose solubility in a developing solution is changed by the action of the acid
Data Source
AI summary
A resist composition including a resin component (A1), a compound (B0) represented by General Formula (b0), and a photodegradable base (D0) that has a carboxylic acid with a pKa of 0.3 to 2.5 as a generated acid. In formula (b0), Rb11 to Rb13 represent a halogen atom, Rb21 to Rb23 each independently represents a hydrogen atom, mb1, nb1, and ob1 represent an integer of 2 to 5, mb2 represents an integer of 5-mb1, nb2 represents an integer of 5-nb1, ob2 represents an integer of 5-ob1, R101 represents a cyclic group, R102 represents a fluorinated alkyl group or a fluorine atom, Y101 represents a divalent linking group having an oxygen atom or a single bond, and V101 represents a single bond, an alkylene group, or a fluorinated alkylene group