Resist Composition for Semiconductor Lithography Focus Margin
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Solution Overview
Problem
Conventional resist compositions used in photolithographic techniques for semiconductor microfabrication often fail to meet requirements for focus margin and mask error factor, leading to increased defects in the resist patterns produced.
Innovation Solution
A resist composition comprising a resin with a structural unit derived from a specific compound and an acid generator, applied to a substrate, dried, exposed, and developed to produce a resist pattern with improved focus margin and reduced defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist composition is used, then the resist pattern can be produced, but the focus margin (DOF) is not satisfied and mask error factor (MEF) is not satisfied, leading to increased defects
Solution Approach 1:
The patent modifies the chemical structure of the polymer by introducing specific structural units with formulas (a) and (b), changing the compositional parameters of the resist material to achieve improved focus margin and reduced defects
Solution Approach 2:
The resist composition uses a composite polymer structure containing both structural unit (a) with specific functional groups and structural unit (b), combining different chemical characteristics to simultaneously achieve wide focus margin and low defect rate
2Manufacturing precision
If conventional resist composition is used, then the resist pattern can be produced, but the mask error factor (MEF) is not satisfied
Solution Approach 1:
The patent changes the chemical composition parameters by incorporating polymer units with specific functional groups (carboxyl, hydroxyl, or amine groups) to optimize the resist's interaction with mask materials, thereby improving mask error factor
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves a wide focus margin and excellent mask error factor, resulting in resist patterns with fewer defects, enhancing the precision and quality of semiconductor microfabrication.
Implementation Method 1
a resist composition contains a resin having a structural unit derived from a compound represented by the formula (a); and an acid generator
Data Source
AI summary
A resist composition contains; a resin having a structural unit derived from a compound represented by the formula (a); and an acid generator.wherein R1 represents a hydrogen atom or a methyl group; R2 represents an optionally substituted C1 to C18 aliphatic hydrocarbon group; A1 represents an optionally substituted C1 to C6 alkanediyl group or a group represented by the formula (a-g1);wherein s represents 0 or 1; A10 and A12 independently represent an optionally substituted C1 to C5 aliphatic hydrocarbon group; A11 represents a single bond or an optionally substituted C1 to C5 aliphatic hydrocarbon group; X10 and X11 independently represents an oxygen atom, a carbonyl group, a carbonyloxy group or an oxycarbonyl group; provided that a total number of the carbon atom of A10, A11, A12, X10 and X11 is 6 or less.