Resist Composition for High-Resolution Lithography Patterns
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Solution Overview
Problem
Current lithography techniques face challenges in improving lithography properties, particularly in positive-tone developing processes using chemically amplified resist compositions with alkali developing solutions and negative-tone developing processes using organic developing solutions, as they struggle to achieve high resolution and pattern fidelity for extremely fine patterns.
Innovation Solution
A resist composition incorporating a base component that changes solubility in a developing solution and an acidic compound component that decreases acidity upon exposure, allowing for the formation of both positive-tone and negative-tone patterns using either alkali or organic developing solutions, thereby enhancing lithography properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If chemically amplified resist compositions are used with alkali developing solutions for positive-tone developing, then sensitivity to exposure light source is improved, but manufacturing precision of extremely fine patterns deteriorates
Solution Approach 1:
The invention changes the chemical parameters of the resist composition by introducing specific carboxylic acid groups and sulfonic acid groups in controlled amounts. This modifies the solubility characteristics and acid-base balance of the resist, enabling it to maintain high sensitivity while achieving the required pattern fidelity for extremely fine features.
Solution Approach 2:
The invention creates a composite resist composition by combining multiple components: base resin, carboxylic acid-containing compounds, sulfonic acid compounds, and other additives. This composite approach allows the resist to exhibit both high sensitivity and high manufacturing precision by leveraging the synergistic effects of different materials.
2Use of energy by moving object
If chemically amplified resist compositions are used with organic developing solutions for negative-tone developing, then sensitivity to exposure light source is improved, but manufacturing precision of extremely fine patterns deteriorates
Solution Approach 1:
The invention adjusts the chemical parameters by controlling the content of carboxylic acid groups and sulfonic acid groups to optimize the resist's behavior in organic developing solutions. This enables negative-tone developing to achieve both high sensitivity and high pattern fidelity.
Solution Approach 2:
The composite resist composition combines base resin with specific amounts of carboxylic acid-containing compounds and sulfonic acid compounds, creating a material that works effectively with organic developing solutions to produce high-quality negative-tone patterns with excellent fidelity.
3Ease of manufacture
If conventional resist compositions are used, then ease of manufacture is maintained, but lithography properties for high resolution patterns deteriorates
Solution Approach 1:
The invention modifies conventional resist compositions by adjusting key chemical parameters: introducing carboxylic acid groups at 0.1-10 mmol/g and sulfonic acid groups at 0.01-5 mmol/g. These parameter changes enable high-resolution patterning while maintaining compatibility with existing manufacturing processes.
Solution Approach 2:
The invention introduces specific functional groups at controlled local concentrations within the resist composition. The carboxylic acid and sulfonic acid groups are distributed at specific levels to create local chemical environments that enhance resolution without requiring complete reformulation of the entire resist system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of high-resolution, fine patterns with improved development contrast and pattern fidelity, suitable for advanced semiconductor and display device manufacturing, by altering the solubility of the resist components in response to exposure, allowing for efficient pattern formation in both alkali and organic developing processes.
Implementation Method 1
an acidic compound component (J) which is decomposed by exposure to exhibit decreased acidity
Data Source
AI summary
A resist composition including a base component (A) which exhibits changed solubility in a developing solution, and an acidic compound component (J) which is decomposed by exposure to exhibit decreased acidity, wherein the acidic compound component (J) contains a compound represented by formula (J1) [in the formula, R1 represents H, OH, halogen atom, alkoxy group, hydrocarbon group or nitro group; m represents 0-4; n represents 0-3; Rx represents H or hydrocarbon group; X1 represents divalent linking group; X2 represents H or hydrocarbon group; Y represents single bond or C(O); A represents alkylene group which may be substituted with oxygen atom, carbonyl group or alkylene group which may have fluorine atom; Q1 and Q2 represents F or fluorinated alkyl group; and W+ represents primary, secondary or tertiary ammonium coutercation which exhibits pKa smaller than pKa of H2N+(X2)—X1—Y—O-A-C(Q1)(Q2)—SO3− generated by decomposition upon exposure].