Chemical Amplification Resist Composition for Line Width Roughness Control
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Solution Overview
Problem
Current pattern forming methods in semiconductor manufacturing face challenges in achieving excellent line width roughness and exposure latitude, particularly with the demand for shorter wavelengths and higher numerical apertures, where finding an appropriate combination of resist composition, developer, and rinsing liquid is difficult.
Innovation Solution
A pattern forming method using an actinic ray-sensitive or radiation-sensitive resin composition containing a compound represented by General Formula (I), which includes a monovalent basic compound residue and a resin capable of decreasing solubility with an organic solvent, along with a compound that generates acid upon irradiation, developed using a developer containing an organic solvent.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a pattern forming method using chemical amplification is used with shorter wavelength exposure light, then sensitivity reduction is compensated, but line width roughness increases and exposure latitude decreases
Solution Approach 1:
The patent changes the chemical parameters of the resin composition by introducing a basic compound with specific pKa value (6-11) and specific structural features (Formula I). This parameter optimization allows the system to maintain sensitivity while reducing line width roughness, as the basic compound moderates the acid generation and reaction kinetics during exposure and development
Solution Approach 2:
The patent creates a composite resist system combining the polymer component, the basic compound (Formula I), and the photoacid generator. This composite material approach allows synergistic effects where the basic compound modulates the chemical amplification process, improving both sensitivity and line width control simultaneously
2Use of energy by moving object
If a pattern forming method using chemical amplification is used with shorter wavelength exposure light, then sensitivity reduction is compensated, but exposure latitude decreases
Solution Approach 1:
The basic compound (Formula I) with optimized pKa value (6-11) and structural parameters creates a more gradual and controllable chemical amplification response. This parameter optimization broadens the exposure latitude by allowing a wider range of exposure doses to produce acceptable patterns, while still maintaining high sensitivity through the chemical amplification mechanism
3Manufacturing precision
If an alkali developer is used for development, then a desired pattern is obtained by removing the exposed portion, but it is difficult to find an appropriate combination of resist composition, developer and rinsing liquid for excellent performance
Solution Approach 1:
The patent changes the chemical parameters of the resist composition by incorporating the basic compound (Formula I) with specific pKa and structural features. This modification makes the resist more compatible with standard alkali developers, simplifying the overall system while achieving excellent pattern formation without requiring complex developer formulations
Data Source
AI summary
The pattern forming method of the present invention includes: (i) forming a film including an actinic ray-sensitive or radiation-sensitive resin composition containing a compound (A) represented by General Formula (I) shown below; a resin (P) capable of decreasing solubility with respect to a developer including organic solvent by the action of an acid; and a compound (B) capable of generating an acid by irradiation of actinic rays or radiation; (ii) irradiating the film with actinic rays or radiation; (iii) developing the film irradiated with the actinic rays or radiation using a developer including an organic solvent.[Chem. 1]RN-A−X+ (I)