Resist Composition for 248 nm Lithography Film Thickness

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Solution Overview

Problem

As the film thickness of resist films increases, maintaining sensitivity during exposure becomes more difficult, leading to reduced resolution and desired resist pattern shape, along with potential shape deterioration due to decreased light transmittance.

Innovation Solution

A resist composition comprising a resin with a molar absorption coefficient of 2,000 mol−1·L·cm−1 or less at 248 nm, an acid generator, and a crosslinking agent, such as melamine-based or epoxy-based crosslinking agents, which improves transmittance and solubility characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the film thickness of the resist film is increased, then the capacity of memory by stacking cells is improved, but the sensitivity during exposure deteriorates and resolution is reduced

Engineering Contradiction:
Improvefilm thicknessVSAvoidresolution
Core Design Contradiction:
Volume of moving objectVSManufacturing precision

Solution Approach 1:

The patent changes the chemical composition parameters of the resist material by incorporating specific base materials (polyhydroxystyrene derivatives, carboxylic acid polymers) and acid generators that work synergistically to maintain sensitivity in thick films. The molar ratio and concentration of each component are precisely controlled to optimize both thickness and resolution

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent uses a composite resist system combining multiple polymer components (polyhydroxystyrene with poly carboxylic acid), crosslinking agents, and acid generators. This composite structure allows the thick film to maintain both mechanical integrity and chemical sensitivity to exposure light, resolving the contradiction between thickness and resolution

Inventive Principle:
Principle #40Composite materials

2Volume of moving object

If the film thickness of the resist film is increased, then the memory capacity by stacking cells is improved, but the light transmittance decreases causing shape deterioration

Engineering Contradiction:
Improvefilm thicknessVSAvoidlight transmittance
Core Design Contradiction:
Volume of moving objectVSObject-affected harmful factors

Solution Approach 1:

The patent optimizes the optical parameters of the resist by selecting base materials with appropriate absorption coefficients and incorporating transparent crosslinking agents. The film composition is engineered to balance thickness with light transmission, ensuring sufficient exposure reaches the substrate interface while maintaining pattern definition

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The acid generator acts as an intermediary that amplifies the exposure effect. Upon absorbing light, it generates acid that catalyzes crosslinking reactions, allowing the resist to respond effectively to exposure even when light transmittance is reduced by increased film thickness

Inventive Principle:
Principle #24Intermediary (Mediator)

3Volume of moving object

If the film thickness of the resist film is increased, then the memory capacity by stacking cells is improved, but the solubility at substrate interface deteriorates

Engineering Contradiction:
Improvefilm thicknessVSAvoidsolubility
Core Design Contradiction:
Volume of moving objectVSStability of the object's composition

Solution Approach 1:

The patent modifies the solubility parameters of the resist system by incorporating poly carboxylic acid components that provide controlled solubility in the developing solution. The crosslinking density and polymer chain structure are optimized to ensure the substrate interface region maintains appropriate solubility for complete development while supporting increased film thickness

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The resist composition enables the formation of resist patterns with improved resolution, depth of focus (DOF), and pattern shape, even at increased film thicknesses.

Implementation Method 1

an acid generator component that generates acid upon exposure

Methodology Applied
Scientific EffectPhotochemical reaction: Photodissociation

Implementation Method 2

the resin (A) is an alkali-soluble resin having a molar absorption coefficient of 2,000 mol−1·L·cm−1 or less at a wavelength of 248 nm

Methodology Applied
Scientific EffectLight absorption: Absorption (EM radiation)

Data Source

PatentUS20250068072A1Resist composition and resist pattern forming method
Publication Date: 2025.02.27 TOKYO OHKA KOGYO CO LTD
  • US20250068072A1 patent drawing
  • US20250068072A1 patent drawing
  • US20250068072A1 patent drawing

AI summary

A resist composition containing a resin, an acid generator, and a crosslinking agent, in which the resin is an alkali-soluble resin having a molar absorption coefficient of 2,000 mol−1·L·cm−1 or less at a wavelength of 248 nm, and the crosslinking agent is at least one of a melamine-based crosslinking agent, a urea-based crosslinking agent, an alkylene urea-based crosslinking agent, a glycoluril-based crosslinking agent, and an epoxy-based crosslinking agent.