Chemical Amplification Resist Composition for Fine Pattern Resolution
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional pattern formation techniques for semiconductor devices face challenges in achieving high-precision fine patterns with low line width variation (LWR) and focus latitude (DOF) due to insufficient exposure margin and depth of focus, especially when using double exposure systems with conventional resist compositions.
Innovation Solution
A pattern forming method using a chemical amplification resist composition that includes a resin with acid-decomposable groups, a compound generating acid upon irradiation, and a basic compound or ammonium salt whose basicity decreases upon irradiation, developed using an organic solvent-containing developer, which enhances solubility control and pattern resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist composition is used in double exposure system, then pattern formation can be performed, but sufficient exposure margin and depth of focus cannot be obtained
Solution Approach 1:
The patent modifies the chemical composition parameters of the resist system by introducing a basic compound (pKb 3-10) that reacts with acid generated during exposure. This chemical parameter change enables the resist to maintain solubility differences between exposed and unexposed regions, providing both high resolution and sufficient exposure margin simultaneously.
Solution Approach 2:
The patent creates a composite resist system combining multiple components: resin with acid-decomposable groups, acid generator, and basic compound. This composite formulation synergistically provides both the resolution needed for fine patterns and the exposure margin required for process reliability.
2Manufacturing precision
If double exposure system is used to enhance resolution, then fine pattern transfer is achieved, but the process complexity increases
Solution Approach 1:
The resist composition performs self-regulation through the basic compound that automatically reacts with generated acid to control solubility. This self-service mechanism simplifies the double exposure process by eliminating the need for complex external control systems while maintaining precise line width control.
3Manufacturing precision
If organic solvent developer is used, then solubility control is improved, but developability becomes difficult
Solution Approach 1:
The basic compound acts as an intermediary that mediates between the acid generator and the resin. It controls the solubility changes during development, enabling organic solvent developers to effectively distinguish between exposed and unexposed regions while maintaining good developability and pattern profile.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method stabilizes high-precision fine pattern formation with improved line width variation and focus latitude, achieving better pattern profile and resolution using a combination of acid-generated solubility changes and organic solvent development.
Implementation Method 1
causing an acid generator in the exposed area to decompose upon exposure and thereby generate an acid
Implementation Method 2
a basic compound or ammonium salt compound whose basicity decreases upon irradiation with an actinic ray or radiation
Data Source
AI summary
A pattern forming method, including: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using a developer containing an organic solvent, wherein the chemical amplification resist composition contains: (A) a resin capable of decreasing a solubility of the resin (A) in the developer containing an organic solvent by an action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a basic, compound or ammonium salt compound whose basicity decreases upon irradiation with an actinic ray or radiation, and a resist composition used for the pattern forming method and a resist film formed from the resist composition are provided.