Resist Composition for Fine Pattern Formation
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Solution Overview
Problem
Current resist compositions face challenges in achieving balanced performance for fine pattern formation of 100 nm or less in line width, particularly in reducing line edge roughness, pattern collapse, exposure latitude, and defocus latitude, while maintaining high sensitivity and resolution.
Innovation Solution
A resist composition comprising at least two kinds of resins synthesized by living radical polymerization using a chain transfer agent, combined with an acid generator and a basic compound, to enhance solubility in alkali developers and improve pattern formation characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional naphthoquinonediazide/novolak series resins are used, then high sensitivity and resolution are achieved, but line edge roughness increases and pattern collapse occurs
Solution Approach 1:
The patent changes the chemical structure parameters of the resin by using poly(hydroxystyrene) with specific molecular weight and composition ratio instead of conventional naphthoquinonediazide/novolak resins. This parameter change maintains high sensitivity and resolution while reducing line edge roughness and pattern collapse in fine patterns of 100 nm or less
Solution Approach 2:
The patent uses a composite resist composition comprising poly(hydroxystyrene) as the main resin combined with specific additives and solvents. This composite material approach achieves balanced performance across multiple parameters including sensitivity, resolution, line edge roughness, and pattern collapse resistance
2Productivity
If poly(hydroxystyrene) resin is used for KrF excimer laser exposure, then high sensitivity and resolution are achieved, but pattern collapse occurs in fine patterns of 100 nm or less
Solution Approach 1:
The patent optimizes the molecular weight and composition ratio parameters of poly(hydroxystyrene) to achieve a balance between sensitivity and pattern collapse resistance. By controlling these parameters within specific ranges, the resist maintains high sensitivity for KrF excimer laser exposure while preventing pattern collapse in fine patterns
Solution Approach 2:
The patent introduces local quality differences by adding specific components to different regions of the resist composition. The combination of poly(hydroxystyrene) with specific additives creates local property variations that enhance pattern collapse resistance in critical areas while maintaining overall sensitivity
3Reliability
If multiple resins are combined to improve total performance, then sensitivity and etching resistance are enhanced, but device complexity increases
Solution Approach 1:
The patent uses poly(hydroxystyrene) as a universal base resin that provides multiple functions including sensitivity, resolution, and etching resistance. By making the main resin multi-functional, the patent reduces the need for complex multi-resin combinations while achieving balanced total performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves improved line edge roughness, reduced pattern collapse, and balanced exposure and defocus latitudes, ensuring high-resolution and sensitive pattern formation for advanced semiconductor and microfabrication applications.
Implementation Method 1
a compound capable of generating an acid upon irradiation with an actinic ray or radiation
Implementation Method 2
at least two kinds of resins each of which decomposes by action of an acid to undergo an increase in its solubility for an alkali developer
Data Source
AI summary
A resist composition comprises (A) at least two kinds of resins each of which decomposes by the action of an acid to undergo an increase in its solubility for an alkali developer, wherein at least one kind of the resins (A) is a resin synthesized by living radical polymerization using a chain transfer agent represented by formula (I):wherein:A represents an organic group not containing hetero atoms; andY represents an organic group capable of releasing a radical.