Chemically Amplified Resist Composition for Rectangular Pattern Formation
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Solution Overview
Problem
Current chemically amplified resist compositions face issues such as insufficient solubility, tapered resist patterns, high film loss, inadequate resolution, poor dry etching resistance, insufficient hardness, low aspect ratio formation, environmental sensitivity, and poor storage stability, which hinder the creation of precise and durable resist patterns for semiconductor manufacturing.
Innovation Solution
A chemically amplified resist composition comprising an alkali-soluble resin with specific repeating units, a photoacid generator, and a solvent, optimized to achieve high solubility, rectangular pattern formation, low film loss, and enhanced dry etching resistance, hardness, and storage stability, allowing for the creation of high-aspect-ratio resist patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional chemically amplified resist compositions are used, then the manufacturing process is simple, but the solubility is insufficient and resolution is inadequate
Solution Approach 1:
The patent optimizes the cLogP parameter of the alkali-soluble resin to a specific range (2.50-3.50) to achieve balanced solubility and pattern formation. This parameter optimization enables sufficient resolution without requiring overly complex composition formulations.
Solution Approach 2:
The patent employs composite material design by combining alkali-soluble resin with specific repeating units, photoacid generators, and solvents in a multi-component system. This composite approach achieves high resolution and rectangular pattern formation while maintaining reasonable compositional complexity.
2Shape
If conventional resist compositions are used, then the formulation is simple, but the resist pattern becomes tapered and rectangular patterns cannot be obtained
Solution Approach 1:
The patent introduces alkali-soluble resin with specific repeating units that have localized chemical properties (hydrophobic/hydrophilic balance) to control pattern shape at the molecular level. This enables rectangular pattern formation without requiring complex multi-step formulation processes.
3Loss of substance
If conventional resist compositions are used, then the composition is simple, but film loss before and after development is large
Solution Approach 1:
The patent optimizes the cLogP parameter and molecular structure of the alkali-soluble resin to achieve appropriate solubility characteristics. This reduces film loss during development while maintaining composition simplicity through parameter optimization rather than adding multiple additives.
4Strength
If conventional resist compositions are used, then the formulation is simple, but dry etching resistance is insufficient
Solution Approach 1:
The patent creates a composite resist system combining alkali-soluble resin with specific repeating units, photoacid generators, and solvents. This composite structure provides enhanced dry etching resistance through the synergistic effects of the components while avoiding overly complex formulations.
5Strength
If conventional resist compositions are used, then the composition is simple, but hardness of the resist film and pattern is insufficient
Solution Approach 1:
The patent optimizes the molecular structure parameters of the alkali-soluble resin, including the cLogP value and repeating unit composition, to achieve appropriate film hardness. This parameter-based optimization enhances resist film strength without requiring complex multi-component formulations.
6Shape
If conventional resist compositions are used, then the process is simple, but high aspect ratio patterns cannot be formed
Solution Approach 1:
The patent optimizes the solubility parameters (cLogP) and molecular weight characteristics of the alkali-soluble resin to enable formation of high aspect ratio patterns. This parameter optimization allows vertical pattern formation while maintaining composition simplicity.
Data Source
AI summary
To provide a chemically amplified resist composition capable of forming a resist pattern having high rectangularity. A chemically amplified resist composition comprising an alkali-soluble resin (A) having a certain structure and a cLogP of 2.76 to 3.35, a photoacid generator (B), and a solvent (C).