Resist Composition Using Sulfur or Iodine Salt for High Resolution
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Solution Overview
Problem
Current resist compositions used for semiconductor fine processing do not achieve satisfactory resolution in forming resist patterns, as they lack the necessary precision and clarity.
Innovation Solution
A resist composition incorporating a specific acid generator salt represented by formula (I) and a crosslinking agent, such as an epoxy compound, is developed, which includes a sulfur or iodine atom, and specific hydrocarbon groups with substituents, to enhance pattern resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional acid generators are used in resist composition, then the resist composition can be manufactured easily, but the resolution of the formed resist pattern is insufficient
Solution Approach 1:
The patent changes the chemical parameters of the acid generator by introducing specific salts containing sulfur or iodine atoms in defined molecular structures (formula I). This structural parameter change enhances the acid generation efficiency and leads to improved resist pattern resolution without complicating the manufacturing process
Solution Approach 2:
The patent employs composite material strategy by combining the specifically structured salt (formula I) with crosslinking agents and other resist components. This composite approach creates a synergistic effect where the salt provides precise acid generation while crosslinking agents enhance pattern fidelity, achieving high resolution without excessive complexity
2Manufacturing precision
If the resist composition uses simpler acid generators, then the manufacturing process is easier, but the pattern formation quality deteriorates
Solution Approach 1:
The patent optimizes chemical parameters by selecting salts with specific molecular structures (formula I) containing sulfur or iodine atoms. These parameter optimizations enhance acid generation efficiency and pattern formation quality while maintaining compatibility with existing manufacturing processes, thus not significantly increasing manufacturing difficulty
3Manufacturing precision
If conventional salts are used in acid generators, then the resist composition is simpler to prepare, but the resolution of the resist pattern is lower
Solution Approach 1:
The patent introduces specific structural parameters in the salt molecules (formula I), particularly the presence of sulfur or iodine atoms at defined positions. This parameter change significantly improves acid generation capability and resist pattern resolution, while the structural modifications remain within manageable complexity for industrial preparation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition effectively produces a resist pattern with improved resolution by utilizing the acid generator salt and crosslinking agent, enabling better pattern formation and processing in semiconductor manufacturing.
Implementation Method 1
a salt capable of forming a resist pattern with resolution which is better than that of a resist pattern formed by the resist composition including the salt
Implementation Method 2
A resist composition comprising an acid generator including a salt represented by formula (I), and a crosslinking agent
Data Source
AI summary
Disclosed are a resist composition comprising an acid generator including a salt represented by formula (I), and a crosslinking agent:wherein X represents S or I; R1, R2 and R3 each represent a hydroxy group, —X2—R10, etc.; X2 represents *—CO—O—, etc.; R4 to R9 each represent a halogen atom, etc.; R10 represents an acid-labile group; A1, A2 and A3 each represent a hydrocarbon group; Ar1, Ar2 and Ar3 each represent an aromatic or heterocyclic aromatic hydrocarbon group; m10 represents 0 or 1, and when X is S, m10 is 1, and when X is I, m10 is 0; m1 to m3 and m7 to m9 represent an integer of 0 to 5, m4 to m6 represent an integer of 0 to 4, 0≤m1+m7≤5, 0≤m2+m8≤5, 0≤m3+m9≤5, at least one of m1 to m3 and m7 to m9 represent an integer of 1 or more, and when m1 to m3=0, at least one of one or more R7 to R9 represent a hydroxy group, —X2—R10, etc.; and AI− represents an organic anion.