Resist Composition for Semiconductor Lithography CDU
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Solution Overview
Problem
Conventional resist compositions used in photolithographic techniques for semiconductor microfabrication often fail to achieve satisfactory critical dimension uniformity (CDU) in the resulting resist patterns.
Innovation Solution
A resist composition comprising a resin with specific structural units and an acid generator, applied in a process involving exposure and development, to produce a resist pattern with improved CDU and reduced defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist composition is used, then the basic photolithographic process can be performed, but the critical dimension uniformity (CDU) of the resist pattern is not satisfactory
Solution Approach 1:
The patent modifies the chemical parameters of the resist composition by incorporating a specific resin with carboxyl groups and controlling the ratio of structural units (aa) and (ab). This changes the chemical reactivity and solubility characteristics of the resist, leading to improved CDU while maintaining reliable pattern formation
Solution Approach 2:
The patent creates a composite resist system combining a polymer with specific structural units (aa) and (ab), an acid generator, and a solvent. This composite material approach allows optimization of multiple properties simultaneously, achieving both high CDU and reliable pattern quality that cannot be obtained with conventional single-component resins
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed resist composition effectively produces resist patterns with excellent critical dimension uniformity and minimal defects, enhancing the precision of semiconductor microfabrication.
Implementation Method 1
A resist composition used for such photolithographic technique contains a resin which is insoluble or poorly soluble in aqueous alkali solution, but becomes soluble in aqueous alkali solution by the action of acid and an acid generator
Data Source
AI summary
A resist composition contains; a resin having a structural unit represented by the formula (aa) and a structural unit represented by the formula (ab); and an acid generator,wherein Raa1 represents a hydrogen atom and a methyl group; Aaa1 represents an optionally substituted C1 to C6 alkanediyl group etc.; Raa2 represents an optionally substituted C1 to C18 aliphatic hydrocarbon group; Rab1 represents a hydrogen atom and a methyl group; Aab1 represents a single bond, an optionally substituted C1 to C6 alkanediyl group etc.; W1 represents an optionally substituted C4 to C24 alicyclic hydrocarbon group; n represents 1 or 2; Aab2 in each occurrence independently represents an optionally substituted C1 to C6 aliphatic hydrocarbon group; Rab2 in each occurrence independently represents a C1 to C12 fluorinated alkyl group.