Chemically Amplified Resist Composition for Semiconductor Packaging

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Solution Overview

Problem

Conventional chemically amplified photosensitive compositions used for forming patterned resist films on metal surfaces suffer from variations in film thickness, leading to inaccuracies in the dimensions of patterned resist films, which are critical for high-density semiconductor packaging.

Innovation Solution

Incorporating a compound with a metal coordination group and a molar absorption coefficient of at least 3000 at 365 nm into the chemically amplified photosensitive composition, along with an acid generator, to stabilize the resist film thickness and improve patterning accuracy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional chemically amplified photosensitive compositions are used for forming patterned resist films on metal surfaces, then the photosensitivity and development characteristics are improved, but variations in film thickness occur leading to inaccuracies in the dimensions of patterned resist films

Engineering Contradiction:

Improvedimensional accuracy of patterned resist filmVSAvoidfilm thickness uniformity

Core Design Contradiction:

Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The patent changes the chemical parameters of the photosensitive composition by introducing a metal coordination compound with specific properties (molar absorption coefficient ≥3000 at 365 nm). This parameter change in the composition stabilizes the film thickness and reduces dimensional variations in the patterned resist film, directly resolving the contradiction between manufacturing precision and composition stability.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite photosensitive composition by combining the metal coordination compound with the acid generator and other resist components. This composite material approach integrates the thickness-stabilizing properties of the metal coordination compound with the photosensitivity of the acid generator, achieving both film thickness uniformity and patterning accuracy simultaneously.

Inventive Principle:

Principle #40Composite materials

2Productivity

If high-density packaging is implemented with increased bump electrodes and metal posts, then package density is improved, but the requirements for dimensional precision and film thickness control become more stringent

Engineering Contradiction:

Improvepackage densityVSAvoiddimensional accuracy of patterned resist film

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

By changing the chemical composition parameters to include the metal coordination compound with high molar absorption coefficient, the patent achieves superior film thickness control and dimensional accuracy. This enables high-density packaging applications where precise positioning of bump electrodes and metal posts is critical, thus resolving the contradiction between increased package density and maintained manufacturing precision.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively suppresses variations in the dimensions of patterned resist films, enhancing the precision and accuracy of bump electrodes and metal posts in semiconductor packaging by ensuring consistent film thickness and improved patterning characteristics.

Implementation Method 1

an acid is generated from the acid generator upon irradiation with radiation (exposure) and diffusion of the acid is promoted through heat treatment, to cause an acid catalytic reaction with a base resin and the like in the composition resulting in a change to the alkali-solubility of the same

Methodology Applied

Scientific EffectPhotochemical reaction: Photopolymerisation

Implementation Method 2

a compound (C1) and/or a precursor compound (C2), in which molar absorption coefficient ε at a wavelength of 365 nm of the compound (C1) is at least 3000

Methodology Applied

Scientific EffectAbsorption of electromagnetic radiation: Absorption (EM radiation)

Data Source

PatentUS11803122B2Chemical amplification-type photosensitive composition, photosensitive dry film, production method of patterned resist layer, production method of plated molded article, compound, and production method of compound

Publication Date: 2023.10.31 TOKYO OHKA KOGYO CO LTD

AI summary

A chemically amplified photosensitive composition used for forming a patterned resist film by photolithography on a metal surface of a substrate which at least partly has a surface consisting of metal. The composition includes an acid generator which generates an acid by irradiation of active rays or radioactive rays; and a compound and/or a precursor compound, in which the molar absorption coefficient ε at a wavelength of 365 nm of the compound is at least 3000, the compound has a metal coordination group, and the compound can be formed from the precursor compound during formation of the patterned resist film.