Resist Composition for Semiconductor Patterning
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Solution Overview
Problem
Chemically amplified resists used in semiconductor manufacturing face challenges such as acid diffusion leading to non-uniform patterns and increased surface roughness, especially as semiconductor processes become more miniaturized, and require high exposure doses to change physical properties effectively.
Innovation Solution
A resist composition incorporating an organometallic compound and a specific polymer structure, which changes physical properties even at low exposure doses, improving pattern resolution and uniformity by forming chemical bonds upon exposure to high energy rays.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If chemically amplified resist is used to form patterns, then patterning capability is achieved, but acid diffusion causes non-uniform patterns and increased surface roughness
Solution Approach 1:
The patent removes the photoacid generator and base resin components from the resist system, extracting the harmful acid diffusion mechanism entirely. Instead of using chemically amplified resists that generate acids, the invention employs a direct photopolymerization system where the polymer itself undergoes structural change upon light exposure, eliminating the source of acid diffusion while maintaining patterning capability
Solution Approach 2:
The patent replaces the chemical mechanism (acid-base reaction) with a physical mechanism (direct photopolymerization). The resist uses a polymer with photopolymerizable groups that directly form crosslinks upon light exposure, substituting the chemical amplification process with a physical photochemical reaction that does not involve acid generation or diffusion
2Manufacturing precision
If chemically amplified resist is used for miniaturized semiconductor processes, then fine patterning is enabled, but acid diffusion becomes harder to control
Solution Approach 1:
The patent extracts and removes the acid generation and diffusion mechanism from the resist system entirely. By using a polymer with direct photopolymerizable groups instead of a base resin requiring acid catalysis, the invention eliminates the need to control acid diffusion, simplifying the system while enabling fine pattern formation through direct light-induced crosslinking
3Object-generated harmful factors
If new resist materials are developed to overcome chemically amplified resist limitations, then acid diffusion problems are solved, but exposure dose required increases
Solution Approach 1:
The patent changes the chemical parameters of the resist system by selecting polymers with high photoreactivity groups (acrylate, methacrylate, vinyl) that can undergo rapid polymerization with low light doses. The invention also optimizes the molecular weight and functional group density of the polymer to enhance light absorption efficiency, enabling effective crosslinking at lower exposure doses while maintaining the benefit of no acid diffusion
Solution Approach 2:
The patent creates a composite resist system combining the photopolymerizable polymer with a dispersant and initiator, forming a synergistic material system. The dispersant ensures uniform distribution of polymer chains for consistent light absorption, while the initiator (when used) enhances the photopolymerization efficiency, together enabling low-dose exposure while eliminating acid diffusion problems
4Use of energy by moving object
If resist composition is designed for low exposure dose, then sensitivity improves, but pattern resolution and uniformity may deteriorate
Solution Approach 1:
The patent changes the chemical structure parameters of the polymer to include photopolymerizable groups with high molar extinction coefficients and rapid polymerization rates. By optimizing the molecular weight, functional group density, and chain flexibility, the invention achieves efficient light absorption and fast crosslinking at low doses, producing sharp, well-defined patterns with high resolution and uniformity
Solution Approach 2:
The patent incorporates a dispersant in advance to ensure uniform distribution of polymer chains before exposure. This preliminary dispersion prevents aggregation and ensures consistent light absorption across the resist film, enabling uniform crosslinking and high-resolution patterning even at low exposure doses where incomplete reaction could otherwise cause non-uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition enables the formation of patterns with improved resolution and sensitivity, reducing the need for high exposure doses and enhancing storage stability, while maintaining compatibility and dispersibility for fine pattern formation.
Implementation Method 1
a polymer including a repeating unit represented by Formula 2 below... exposing at least a portion of the resist film to high energy rays... forming chemical bonds upon exposure to high energy rays
Data Source
AI summary
Provided are a resist composition and a method of forming a pattern using the same, wherein the resist composition may include an organometallic compound represented by Formula 1 below, and a polymer including a repeating unit represented by Formula 2 below.For a description of M11, R11, R12, n, A21, L21 to L23, A21 to a23, R21 to R22, b22, and p in Formula 1 and Formula 2, the specification is referred to.