Resist Composition for High-Contrast Organic Solvent Development
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Solution Overview
Problem
Current photolithography techniques face challenges in achieving high resolution and accuracy for forming fine hole patterns, particularly with low dissolution contrast during organic solvent development, which affects the formation of perpendicular patterns and leads to pattern collapse and reduced etch resistance.
Innovation Solution
A resist composition is developed containing a polymer with recurring units having a hydroxyl group substituted with an acid labile group and a compound with a urea, amide, or urethane bond whose nitrogen atom is bonded to a methylol group, combined with an acid generator and an organic solvent, enhancing dissolution contrast and sensitivity through acid-catalyzed reactions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography with organic solvent development is used, then the process is simple and cost-effective, but the dissolution contrast is low leading to poor pattern definition and pattern collapse
Solution Approach 1:
The patent employs a composite resist composition containing a polyhydroxystyrene backbone with acid-labile group-substituted hydroxyl groups, combined with a specific compound featuring a urea/amide/urethane bond with nitrogen bonded to a methylol group. This composite structure enables high dissolution contrast in organic solvent development while maintaining pattern integrity, resolving the contradiction between manufacturing precision and device complexity.
Solution Approach 2:
The invention changes the chemical parameters of the resist composition by introducing acid-labile groups that undergo deprotection upon exposure, transforming the resist's solubility characteristics. This parameter change enables high dissolution contrast in organic solvents without requiring complex development processes, thereby improving pattern definition while keeping the process relatively simple.
2Ease of operation
If the resist composition uses simple organic solvent development, then the process is easy to operate, but the dissolution contrast is low causing reduced etch resistance and pattern collapse
Solution Approach 1:
The resist composition undergoes parameter changes through acid-catalyzed deprotection of acid-labile groups, which transforms the chemical structure to enable high dissolution contrast in organic solvents. This maintains ease of operation with simple organic solvent development while significantly improving pattern stability and preventing collapse through enhanced etch resistance.
Solution Approach 2:
The acid generator acts as an intermediary that mediates the transformation of the resist composition upon exposure. It catalyzes the deprotection of acid-labile groups, creating a chemical distinction between exposed and unexposed regions that enables high dissolution contrast and reliable pattern formation during simple organic solvent development.
3Manufacturing precision
If conventional resist materials are used to form fine hole patterns, then the material cost is low, but the dissolution contrast is insufficient leading to poor dimensional uniformity and reduced etch resistance
Solution Approach 1:
The patent uses a composite resist material consisting of polyhydroxystyrene with acid-labile group-substituted hydroxyl groups combined with a compound containing urea/amide/urethane bonds with nitrogen bonded to methylol groups. This composite structure provides high dissolution contrast and excellent dimensional uniformity for fine hole patterns, resolving the contradiction between manufacturing precision and material composition complexity.
Solution Approach 2:
The resist composition exhibits local quality changes through spatially selective deprotection of acid-labile groups in exposed regions. This creates localized differences in solubility and etch resistance, enabling precise control of hole pattern dimensions and uniformity while using a relatively simple organic solvent development process.
Data Source
AI summary
A negative pattern is formed by coating a resist composition comprising a methylol-substituted urea, amide or urethane compound, a polymer comprising recurring units having an acid labile group-substituted hydroxyl group, and an acid generator onto a substrate, prebaking, exposing to high-energy radiation, and developing in an organic solvent developer such that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. In image formation via positive/negative reversal by organic solvent development, the resist film is characterized by a high dissolution contrast between the unexposed and exposed regions.