Resist Composition for Sub-100 nm Lithography
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Solution Overview
Problem
Conventional resist compositions used in semiconductor and liquid crystal display manufacturing face challenges in achieving high lithography characteristics, particularly in forming fine patterns with dimensions less than 100 nm, as they lack improved roughness and pattern shape quality.
Innovation Solution
A resist composition that generates an acid upon exposure, comprising a base material component with acid-solubility change properties and a compound represented by General Formula (e1), which changes solubility in a developing solution, allowing for enhanced lithography characteristics and pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist compositions are used, then existing lithography processes can be maintained, but lithography characteristics such as roughness and pattern shape cannot be improved for fine patterns less than 100 nm
Solution Approach 1:
The patent introduces compound (E1) with specific structural parameters (Rd01 as monovalent organic group, Rd02 as single bond or divalent linking group) to change the solubility characteristics of the base material component in developing solution. This parameter change enables improved lithography characteristics including roughness and pattern shape for fine patterns less than 100 nm while maintaining compatibility with existing chemical amplification-type resist processes
Solution Approach 2:
The patent creates a composite resist composition system by combining base material component (A) with compound (E1) in specific proportions. This composite approach integrates the acid-solubility change properties of the base material with the solubility-modifying effects of compound (E1), achieving enhanced lithography characteristics that neither component could achieve alone
2Length of moving object
If pattern dimensions are reduced to less than 100 nm, then further miniaturization is achieved, but lithography characteristics such as roughness and pattern shape deteriorate
Solution Approach 1:
The patent uses compound (E1) to modify the solubility parameters of the resist composition, which directly affects the development process and final pattern quality. By adjusting the solubility characteristics through compound (E1), the patent achieves improved roughness and pattern shape even when pattern dimensions are reduced to less than 100 nm
Solution Approach 2:
Compound (E1) acts as an intermediary substance that mediates between the base material component and the developing solution. It controls the solubility interaction during development, enabling precise pattern formation with good roughness and shape control at sub-100 nm dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves improved lithography characteristics such as roughness and pattern shape, enabling the formation of fine patterns with dimensions less than 100 nm, addressing the limitations of conventional resist compositions.
Implementation Method 1
a base material component (A) whose solubility in a developing solution is changed by action of an acid
Implementation Method 2
a resist composition which generates an acid upon exposure
Data Source
AI summary
A resist composition that generates an acid upon exposure and whose solubility in a developing solution is changed by action of an acid, the resist composition containing a base material component whose solubility in a developing solution is changed by action of an acid, and a compound represented by General Formula (e1) in which Rd01 represents a monovalent organic group and Rd02 represents a single bond or a divalent linking group