Resist Composition Balancing Etching Throughput and CDU
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Thick-film resist patterns require both moderate etching resistance and critical dimension uniformity (CDU) for improved throughput, but reducing the hydroxystyrene ratio in the base material component improves etching throughput at the expense of CDU.
Innovation Solution
A resist composition with a resin component containing a constitutional unit represented by General Formula (a10-1) and an acid generator component, where the constitutional unit's proportion is between 5% to 45% by mole, enhancing both etching throughput and CDU.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the ratio of hydroxystyrene constitutional unit in the base material component is reduced, then etching throughput is improved, but critical dimension uniformity deteriorates
Solution Approach 1:
The patent applies parameter changes by precisely controlling the proportion of hydroxystyrene constitutional unit in the base material component to be within 5-45% by mole. This optimal range balances the etching resistance (improving throughput) and critical dimension uniformity (maintaining pattern precision). The acid generator component is also optimized at 1-20 parts by mass per 100 parts of base material, creating a synergistic effect that resolves the contradiction between productivity and manufacturing precision.
2Strength
If the film thickness is increased for thick-film resist pattern, then etching resistance is improved, but pattern resolution deteriorates
Solution Approach 1:
The patent employs composite materials by combining a base material component with specific constitutional units (including hydroxystyrene at controlled proportions) with an acid generator component. This composite resist composition enables thick-film formation (improving etching resistance) while maintaining pattern resolution through the synergistic interaction between the base material and acid generator, allowing the film to be thick enough for etching resistance but still resolve fine patterns.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves good throughput during etching and maintains critical dimension uniformity, balancing the need for efficient etching with uniform pattern formation.
Implementation Method 1
an acid generator component (B) generating an acid upon exposure
Implementation Method 2
the polarity of the base resin increases under the action of the generated acid, thereby making exposed portions of the resist film soluble in the alkali developing solution
Data Source
AI summary
A resist composition containing a resin component having a constitutional unit containing a phenolic hydroxyl group and a compound represented by General Formula (b0-1), in which the proportion of the constitutional unit in the resin component is more than 5% by mole and less than 45% by mole with respect to the total (100% by mole) of all constitutional units constituting the resin component. In the formula, Rb1 represents a hydrocarbon group having 1 or more and 30 or less carbon atoms, n and m represents an integer in a range of 0 to 3, Ra1 and Ra2 represents a hydrogen atom or an organic group, Q1 and Q2 represent a fluorine atom or a perfluoroalkyl group having 1 or more and 6 or less carbon atoms, and L represents an ester bond


