Resist Composition Balancing Etching Throughput and CDU

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Solution Overview

Problem

Thick-film resist patterns require both moderate etching resistance and critical dimension uniformity (CDU) for improved throughput, but reducing the hydroxystyrene ratio in the base material component improves etching throughput at the expense of CDU.

Innovation Solution

A resist composition with a resin component containing a constitutional unit represented by General Formula (a10-1) and an acid generator component, where the constitutional unit's proportion is between 5% to 45% by mole, enhancing both etching throughput and CDU.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the ratio of hydroxystyrene constitutional unit in the base material component is reduced, then etching throughput is improved, but critical dimension uniformity deteriorates

Engineering Contradiction:
Improveetching throughputVSAvoidcritical dimension uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies parameter changes by precisely controlling the proportion of hydroxystyrene constitutional unit in the base material component to be within 5-45% by mole. This optimal range balances the etching resistance (improving throughput) and critical dimension uniformity (maintaining pattern precision). The acid generator component is also optimized at 1-20 parts by mass per 100 parts of base material, creating a synergistic effect that resolves the contradiction between productivity and manufacturing precision.

Inventive Principle:
Principle #35Parameter changes

2Strength

If the film thickness is increased for thick-film resist pattern, then etching resistance is improved, but pattern resolution deteriorates

Engineering Contradiction:
Improveetching resistanceVSAvoidpattern resolution
Core Design Contradiction:
StrengthVSManufacturing precision

Solution Approach 1:

The patent employs composite materials by combining a base material component with specific constitutional units (including hydroxystyrene at controlled proportions) with an acid generator component. This composite resist composition enables thick-film formation (improving etching resistance) while maintaining pattern resolution through the synergistic interaction between the base material and acid generator, allowing the film to be thick enough for etching resistance but still resolve fine patterns.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The resist composition achieves good throughput during etching and maintains critical dimension uniformity, balancing the need for efficient etching with uniform pattern formation.

Implementation Method 1

an acid generator component (B) generating an acid upon exposure

Methodology Applied
Scientific EffectPhotochemical reaction: Photodissociation

Implementation Method 2

the polarity of the base resin increases under the action of the generated acid, thereby making exposed portions of the resist film soluble in the alkali developing solution

Methodology Applied
Scientific EffectPolarity change: Polarisation

Data Source

PatentUS20240036468A1Resist composition and method for forming resist pattern
Publication Date: 2024.02.01 TOKYO OHKA KOGYO CO LTD
  • US20240036468A1 patent drawing
  • US20240036468A1 patent drawing
  • US20240036468A1 patent drawing

AI summary

A resist composition containing a resin component having a constitutional unit containing a phenolic hydroxyl group and a compound represented by General Formula (b0-1), in which the proportion of the constitutional unit in the resin component is more than 5% by mole and less than 45% by mole with respect to the total (100% by mole) of all constitutional units constituting the resin component. In the formula, Rb1 represents a hydrocarbon group having 1 or more and 30 or less carbon atoms, n and m represents an integer in a range of 0 to 3, Ra1 and Ra2 represents a hydrogen atom or an organic group, Q1 and Q2 represent a fluorine atom or a perfluoroalkyl group having 1 or more and 6 or less carbon atoms, and L represents an ester bond