Resist Compound for Fine Pattern Formation
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Solution Overview
Problem
As semiconductor devices become highly integrated and miniaturized, there is a need for resist compounds that can form fine and uniform patterns with high photosensitivity and reactivity to meet the increasing demands of advanced photolithography processes.
Innovation Solution
A resist compound represented by Formula 1, which includes an alkyl group, alkenyl group, or hydrocarbon ring group bonded to O or NR2, combined with an organic solvent, is used to form a resist composition that exhibits high absorbance and reactivity to light, allowing for precise pattern formation without the need for a photoacid generator.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist compounds are used for highly integrated and miniaturized semiconductor devices, then the manufacturing process can proceed with standard materials, but the ability to form fine and uniform patterns with high precision deteriorates
Solution Approach 1:
The patent changes the chemical parameters of the resist compound by introducing specific functional groups (carboxylic acid groups with pKa values of 3-7) and controlling the molecular weight distribution (Mw/Mn ratio of 1.05-1.3). These parameter changes enable the resist to achieve both fine pattern formation capability and high manufacturing precision, resolving the contradiction between adaptability to fine pitch and pattern formation precision.
Solution Approach 2:
The patent creates a composite resist system by combining the specific resist compound with a photoacid generator (PAG) and organic solvent. This composite material approach allows the resist to exhibit enhanced properties for fine pattern formation while maintaining manufacturing precision, effectively resolving the technical contradiction through material composition optimization.
2Ease of manufacture
If the resist compound structure is simplified for ease of manufacture, then the manufacturing process becomes easier, but the photosensitivity characteristics and reactivity deteriorate
Solution Approach 1:
The patent optimizes the molecular weight parameters (Mn: 5,000-50,000 g/mol and Mw/Mn ratio: 1.05-1.3) of the resist compound to achieve a balance between ease of manufacture and photosensitivity. This parameter optimization allows the resist to maintain good solubility and processability while exhibiting high photosensitivity and reactivity for reliable pattern formation.
3Length of moving object
If the resist layer thickness is reduced to achieve finer patterns, then the pattern dimension is improved, but the line-edge roughness and line width roughness deteriorate
Solution Approach 1:
The patent changes the chemical composition parameters of the resist compound, specifically incorporating carboxylic acid groups with controlled pKa values (3-7) and optimizing the molecular weight distribution. These parameter changes enable the resist to form smooth, uniform patterns even at reduced thicknesses, thereby achieving fine pattern dimensions while maintaining low line-edge and line width roughness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist compound achieves high photosensitivity and reactivity, enabling the formation of fine and uniform patterns with improved line-edge roughness and line width roughness characteristics, suitable for extreme ultraviolet and electron beam exposure processes.
Implementation Method 1
irradiating light of a certain wavelength to a resist layer to cause a change in a chemical structure of the resist layer
Data Source
AI summary
A resist compound is represented by Formula 1:wherein R1 is an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 1 to 12 carbon atoms, or a hydrocarbon ring group having 3 to 12 carbon atoms, and A bonded to R1 is O or NR2, wherein R2 is hydrogen, an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 1 to 12 carbon atoms, or a hydrocarbon ring group having 3 to 12 carbon atoms. A resist composition includes the resist compound and an organic solvent. A method for forming a resist pattern includes forming a resist layer by applying the resist composition including the resist compound on a substrate, irradiating light onto the resist layer to provide an irradiated resist layer, and developing the irradiated resist layer to form a resist pattern.