Resist Copolymer Side Chain Decomposition Reduction
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Solution Overview
Problem
Current resist materials used in lithography techniques for semiconductor and liquid crystal display element production face challenges in reducing defects and improving lithography properties, particularly with resins containing sultone rings and acid-decomposable groups, which experience side chain decomposition during production, leading to suboptimal pattern miniaturization and increased defects.
Innovation Solution
A method of producing a polymeric compound by copolymerizing specific monomers with a partial structure represented by formula (am0-1), an acid-decomposable group, and an —SO2— containing cyclic group in the presence of a nitrogen-containing compound with a conjugated acid dissociation constant of less than 10, to reduce defects and enhance lithography properties, forming a resist composition that can be used for forming precise resist patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If resins containing sultone rings and acid-decomposable groups are used to improve adhesion and suppress pattern collapse, then lithography properties are enhanced, but side chain decomposition occurs during production leading to increased defects
Solution Approach 1:
The patent changes the chemical parameters of the resin by replacing sultone rings with cyclic carbonate groups and adjusting the acid-decomposable group structure. This parameter change maintains the desired lithography properties (adhesion, pattern collapse suppression) while eliminating the harmful side chain decomposition that occurs with conventional sultone-containing resins during production.
Solution Approach 2:
The patent extracts and removes the problematic sultone ring structure from the resin composition while retaining the beneficial functional groups. By taking out the specific harmful component (sultone ring) and replacing it with an alternative structure (cyclic carbonate), the invention eliminates side chain decomposition while preserving lithography performance.
2Manufacturing precision
If conventional resist materials are used to achieve pattern miniaturization, then lithography resolution is improved, but defects increase due to side chain decomposition
Solution Approach 1:
The patent modifies the chemical composition parameters of the resist material by introducing specific copolymer structures containing cyclic carbonate groups and controlled acid-decomposable group ratios. This parameter change enables achieving pattern miniaturization with high precision while suppressing defect formation caused by side chain decomposition.
Solution Approach 2:
The patent uses composite material design by combining multiple functional monomers in specific ratios to create a copolymer resin. The composite structure integrates cyclic carbonate groups for adhesion, controlled acid-decomposable groups for lithography performance, and stabilizing components that prevent side chain decomposition, thereby achieving both miniaturization and low defect rates.
3Reliability
If resins with increased polarity are used to improve solubility in alkali developing solution, then positive-tone patterning is achieved, but solubility in organic solvent decreases affecting negative-tone developing
Solution Approach 1:
The patent applies local quality by creating a resin structure with spatially differentiated functional groups. The copolymer contains localized polar regions (from cyclic carbonate and acid-decomposable groups) that provide alkali solubility for positive-tone patterning, while the overall polymer backbone and non-polar segments maintain compatibility with organic solvents, enabling versatility in developing processes.
Solution Approach 2:
The patent changes the solubility parameters of the resin by carefully controlling the ratio and distribution of polar and non-polar segments in the copolymer structure. This parameter adjustment allows the resin to exhibit appropriate solubility characteristics for both alkali and organic developing solutions, achieving adaptability across different developing processes while maintaining positive-tone patterning performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed method effectively reduces defects and improves lithography properties by preventing side chain decomposition and enhancing adhesion to substrates, leading to more precise and stable resist patterns with reduced line edge roughness and improved storage stability.
Implementation Method 1
copolymerizing specific monomers with a partial structure represented by formula (am0-1), an acid-decomposable group, and an —SO2— containing cyclic group in the presence of a nitrogen-containing compound with a conjugated acid dissociation constant of less than 10
Implementation Method 2
A method of producing a polymeric compound by copolymerizing specific monomers
Implementation Method 3
a resin component that exhibits changed solubility in a developing solution under the action of acid
Data Source
AI summary
A method of producing a copolymer, including copolymerizing a monomer (am0) containing a partial structure represented by formula (am0-1) shown below, a monomer (am1) containing an acid decomposable group which exhibits increased polarity by the action of acid and a monomer (am5) containing an —SO2— containing cyclic group in the presence of a nitrogen-containing compound (X) having a conjugated acid with an acid dissociation constant of less than 10 (in the formula, *0 to *4 each represents a valence bond).