Resist Composition Cyclic Ammonium Salt Acid Diffusion Control
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Solution Overview
Problem
Current resist compositions face challenges in achieving high sensitivity, low line width roughness (LWR), and improved critical dimension uniformity (CDU) due to limitations in acid diffusion control and light contrast, especially as pattern feature sizes approach the diffraction limit of light.
Innovation Solution
A resist composition incorporating a cyclic ammonium salt compound with a tertiary ester structure, paired with a 1,1,1,3,3,3-hexafluoro-2-propoxide anion, is used to control acid diffusion and enhance contrast, sensitivity, and resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional quenchers are used to control acid diffusion, then acid diffusion control is achieved, but contrast improving effect is faint and sensitivity is insufficient
Solution Approach 1:
The patent modifies the molecular weight and structural parameters of the quencher by introducing a polymer backbone with specific repeating units containing basic nitrogen atoms. This parameter change enables the quencher to simultaneously achieve superior acid diffusion control and high contrast improvement, resolving the trade-off between sensitivity and contrast that plagues conventional small molecule quenchers.
Solution Approach 2:
The invention creates a composite quencher structure by combining a polymer backbone (polycycloolefin, polyolefin, or polyester) with basic nitrogen-containing groups. This composite structure integrates the acid diffusion control capability of the polymer matrix with the base strength of nitrogen-containing groups, achieving both high sensitivity and high contrast simultaneously.
2Productivity
If pattern feature size is reduced to increase integration density, then manufacturing capability is improved, but light contrast lowers and resolution deteriorates
Solution Approach 1:
The patent changes the chemical parameters of the resist system by introducing a polymer-based quencher with specific basic nitrogen-containing groups. This enables the system to maintain high light contrast and resolution even when pattern feature sizes are reduced to 10nm node and below, allowing continued scaling for higher integration density.
3Quantity of substance
If resist film thickness is increased for 3D-NAND, then capacity is improved, but dimensional uniformity becomes difficult to maintain
Solution Approach 1:
The patent modifies the quencher parameters by using a polymer structure with controlled molecular weight and basic nitrogen content. This enables the resist film to maintain excellent dimensional uniformity across a wide thickness range from 50nm to 200nm, accommodating the thicker films required for high-capacity 3D-NAND devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves reduced LWR, improved CDU, high contrast, and wide process margins by effectively controlling acid diffusion and increasing sensitivity, regardless of tone, leading to enhanced pattern formation capabilities.
Implementation Method 1
control the diffusion of the acid to unexposed region to improve the contrast
Implementation Method 2
Quenchers are often added to these resist compositions for the purpose of controlling the diffusion of the acid
Implementation Method 3
an acid generator capable of generating an acid upon exposure to light or EB
Implementation Method 4
chemically amplified positive resist compositions wherein deprotection reaction takes place under the action of acid
Data Source
AI summary
A resist composition is provided comprising a base polymer and a quencher comprising a salt compound consisting of a cyclic ammonium cation and a 1,1,1,3,3,3-hexafluoro-2-propoxide anion having a trifluoromethyl, hydrocarbylcarbonyl or hydrocarbyloxycarbonyl group bonded thereto. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.