Resist Development Model Segmentation for Lithography Simulation
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Solution Overview
Problem
Existing resist development modeling techniques are not accurate for a wide range of patterns and are too slow for full-chip applications, lacking physical comprehensiveness and efficiency in simulating the resist development process.
Innovation Solution
A fast and comprehensive resist development model based on first principles, simulating physical and chemical processes, including diffusion and chemical reactions, to accurately predict resist development characteristics, such as critical dimension and edge placement error, using a computer simulation that separately models diffusion and chemical reactions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If existing resist development modeling techniques are used, then the model is simpler and faster to compute, but the accuracy and physical comprehensiveness for a wide range of patterns deteriorates
Solution Approach 1:
The patent segments the complex resist development process into distinct physical and chemical components (diffusion, chemical reactions, dissolution) that can be modeled separately and then integrated. This allows each component to be optimized independently, achieving both accuracy and computational efficiency.
Solution Approach 2:
The patent introduces multiple parameters including dissolution rate, diffusion coefficients, and chemical reaction rates to accurately model the resist development process. By carefully selecting and optimizing these parameters, the model achieves high accuracy across different pattern types while maintaining computational feasibility.
2Adaptability or versatility
If existing resist development modeling techniques are used, then the computation is faster, but the physical comprehensiveness and applicability to full-chip applications deteriorates
Solution Approach 1:
The patent divides the full-chip simulation into manageable segments by processing different regions and layers separately. This segmentation enables the comprehensive physical model to be applied to entire chips without prohibitive computational costs, as each segment can be processed independently and efficiently.
Solution Approach 2:
The patent performs preliminary calculations and pre-processing of resist parameters before the main simulation. By preparing dissolution rates, diffusion coefficients, and other parameters in advance, the actual full-chip simulation runs faster while maintaining physical comprehensiveness.
3Reliability
If a comprehensive physical model is used, then the simulation accuracy and physical comprehensiveness improve, but the device complexity and computational requirements increase
Solution Approach 1:
The patent segments the comprehensive physical model into distinct modules for diffusion, chemical reactions, and dissolution processes. Each module can be implemented and validated independently, reducing the overall complexity while maintaining the reliability of the complete model through systematic integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The model provides accurate and efficient simulation of resist development, enabling more precise lithography and higher yield by predicting resist development characteristics effectively for various patterns, addressing the limitations of existing empirical models.
Implementation Method 1
a first characteristic of a diffusion in the development of the resist layer is determined as if there were no chemical reaction in the development of the resist layer
Implementation Method 2
a second characteristic of a chemical reaction in the development of the resist layer is determined as if there were no diffusion in the development of the resist layer
Data Source
AI summary
A method, including: obtaining a set of conditions for a resist development model for simulating a resist development process of a resist layer; and performing, by a hardware computer system, a computer simulation of the resist development process using the set of conditions and the resist development model to obtain a characteristic of the development of the resist layer, wherein the computer simulation separately simulates different certain different physical and chemical processes and characteristics of the resist development process.