Metal-Containing Resist Development for Precise Pattern Shape Adjustment
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Solution Overview
Problem
Existing substrate processing methods struggle to effectively adjust the shape of development patterns, particularly in semiconductor substrates, due to limitations in selectively removing certain regions of metal-containing resist films.
Innovation Solution
A substrate processing method involving the use of a metal-containing resist film with distinct regions, where the film is developed to selectively remove one region at different selectivities, allowing for precise adjustment of pattern shapes through controlled development processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single selectivity is used for removing the second region from the metal-containing resist film, then the development process is simple, but the shape of the development pattern cannot be precisely adjusted
Solution Approach 1:
The development process is segmented into two distinct stages: a first development process with a first selectivity and a second development process with a second selectivity. This segmentation allows each process to be optimized for specific shape adjustment requirements, enabling precise control over the development pattern shape while maintaining manageable process complexity through systematic division of the development task.
Solution Approach 2:
The invention changes the selectivity parameter between the first and second development processes. By adjusting the selectivity (through modifying development conditions such as developer composition, temperature, or time), the process can precisely control the removal rate of the second region relative to the first region, thereby achieving accurate shape adjustment of the development pattern.
2Manufacturing precision
If the second region is removed with high selectivity, then the pattern definition is sharp, but the removal speed may be too slow for productivity
Solution Approach 1:
The development process employs periodic action by alternating between a first development process and a second development process. The first development process can operate at higher removal speeds for initial pattern formation, while the second development process provides refined shape adjustment with appropriate selectivity. This periodic alternation between different development conditions optimizes both productivity and pattern definition accuracy.
Data Source
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AI summary
To provide a technique of adjusting a shape of a development pattern. A substrate processing method is provided. The method includes (a) providing a substrate on a substrate support, the substrate having an underlying film and a metal-containing resist film on the underlying film, the metal-containing resist film including a first region and a second region; and (b) developing the metal-containing resist film to selectively remove the second region from the metal-containing resist film, in which the (b) includes (b1) removing the second region with respect to the first region at a first selectivity, and (b2) further removing the second region with respect to the first region at a second selectivity different from the first selectivity.