Metal-Containing Resist Development with Alternating Temperature Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing substrate processing methods struggle to selectively remove exposed and unexposed regions of a metal-containing resist film on a substrate with high selectivity and precision, leading to potential film thickness loss and residue formation during development.
Innovation Solution
A substrate processing method involving controlled temperature changes and gas supply conditions, including alternating temperatures and pressures, along with plasma formation, to selectively remove the unexposed regions of the metal-containing resist film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional substrate processing methods are used to remove unexposed regions of metal-containing resist film, then development can be performed, but film thickness loss and residue formation occur, reducing manufacturing precision
Solution Approach 1:
The invention changes the temperature parameter during development by alternately controlling the substrate support temperature between a first temperature (for removing unexposed regions) and a second temperature (for removing exposed regions). This dynamic parameter change enables selective removal with high precision while minimizing film thickness loss and residue formation.
Solution Approach 2:
The development process employs periodic action by repeatedly alternating between the first temperature condition and the second temperature condition. This periodic temperature variation allows cyclic switching between removing unexposed regions and removing exposed regions, achieving high selectivity and precision in pattern formation.
2Manufacturing precision
If conventional substrate processing methods are used to remove unexposed regions of metal-containing resist film, then development can be performed, but residue formation occurs, reducing manufacturing precision
Solution Approach 1:
The invention changes the temperature parameter during development by alternately controlling the substrate support temperature between a first temperature (for removing unexposed regions) and a second temperature (for removing exposed regions). This dynamic parameter change enables selective removal with high precision while minimizing film thickness loss and residue formation.
Solution Approach 2:
The development process employs periodic action by repeatedly alternating between the first temperature condition and the second temperature condition. This periodic temperature variation allows cyclic switching between removing unexposed regions and removing exposed regions, achieving high selectivity and precision in pattern formation.
3Manufacturing precision
If single temperature development is used, then process simplicity is maintained, but selectivity of development is insufficient, leading to poor pattern precision
Solution Approach 1:
The invention changes the temperature parameter during development by alternately controlling the substrate support temperature between a first temperature (for removing unexposed regions) and a second temperature (for removing exposed regions). This dynamic parameter change enables selective removal with high precision while minimizing film thickness loss and residue formation.
Solution Approach 2:
The development process employs periodic action by repeatedly alternating between the first temperature condition and the second temperature condition. This periodic temperature variation allows cyclic switching between removing unexposed regions and removing exposed regions, achieving high selectivity and precision in pattern formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the selectivity of development by minimizing film thickness loss and residue formation, thereby improving the precision of pattern formation on substrates.
Implementation Method 1
controlling a temperature of the substrate support to a first temperature to perform development, and controlling the temperature of the substrate support to a second temperature different from the first temperature to perform development
Implementation Method 2
supplying a processing gas to the chamber to develop the substrate and to selectively remove the second region from the metal-containing resist film
Data Source
AI summary
In one exemplary embodiment, a substrate processing method is provided. This method includes providing a substrate on a substrate support in a chamber, the substrate having an underlying film and a metal-containing resist film formed on the underlying film, the metal-containing resist film having an exposed first region and an unexposed second region; and (b) supplying a processing gas to the chamber to develop the substrate and to selectively remove the second region from the metal-containing resist film, wherein the (b) includes (b1) controlling a temperature of the substrate or the substrate support to a first temperature to perform development, and (b2) controlling the temperature of the substrate or the substrate support to a second temperature different from the first temperature to perform development.