Resist Composition for Electron Beam Multibeam Exposure

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current electron beam multibeam exposure methods struggle to achieve both low line width roughness (LWR) and high resolution for ultrafine patterns, particularly in high exposure amount ranges, leading to increased exposure time and reduced productivity in semiconductor manufacturing.

Innovation Solution

A pattern forming method using an actinic ray-sensitive or radiation-sensitive resin composition with a molar ratio of acid diffusion control agent to photoacid generator of 0.3 or greater, combined with simultaneous electron beam irradiation, to enhance LWR performance and resolution while reducing exposure time.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If electron beam multibeam exposure is performed to increase exposure amount and reduce exposure time, then productivity is improved, but line width roughness (LWR) performance and resolution deteriorate

Engineering Contradiction:
Improveexposure timeVSAvoidline width roughness (LWR)
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies parameter changes by optimizing the molar ratio of acid diffusion control agent to photoacid generator (setting it to 0.3 or greater) and adjusting the content of acid diffusion control agent (5-50 mass%) to achieve optimal LWR performance and resolution while maintaining high exposure amount capability in multibeam exposure

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent uses composite materials by formulating a resist composition containing multiple components including acid diffusion control agent (C), photoacid generator (B), and resin (A) in specific ratios, where the synergistic interaction between these components enables both high multibeam exposure sensitivity and excellent LWR performance

Inventive Principle:
Principle #40Composite materials

2Manufacturing precision

If exposure dose is increased to achieve target line width roughness (LWR) performance, then LWR performance is improved, but electron beam exposure time further increases

Engineering Contradiction:
Improveline width roughness (LWR)VSAvoidelectron beam exposure time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent changes the chemical parameters of the resist composition by increasing acid diffusion control agent content to 5-50 mass% and setting the molar ratio (Qp) to 0.3 or greater, which enables achieving target LWR performance at lower exposure doses, thereby reducing exposure time

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively improves LWR performance and resolution in high exposure amount ranges, thereby enhancing the productivity of photo mask manufacturing and reducing electron beam exposure time.

Implementation Method 1

a step of coating a substrate with an actinic ray-sensitive or radiation-sensitive resin composition which contains a resin (A), a photoacid generator (B), and an acid diffusion control agent (C)

Methodology Applied
Scientific EffectPhotoacid generation: Photo-oxidation

Implementation Method 2

an acid diffusion control agent (C) in which a molar ratio (Qp) between the photoacid generator (B) and the acid diffusion control agent (C)

Methodology Applied
Scientific EffectAcid diffusion control: Diffusion

Implementation Method 3

a step of simultaneously irradiating the actinic ray-sensitive film with a plurality of electron beams

Methodology Applied
Scientific EffectElectron beam exposure: Electron Impact Desorption

Data Source

PatentUS10488755B2Pattern forming method, photo mask manufacturing method, and electronic device manufacturing method
Publication Date: 2019.11.26 FUJIFILM CORP
  • US10488755B2 patent drawing
  • US10488755B2 patent drawing
  • US10488755B2 patent drawing

AI summary

A pattern forming method including a step of coating a substrate with an actinic ray-sensitive or radiation-sensitive resin composition and forming an actinic ray-sensitive or radiation-sensitive film; a step of simultaneously irradiating the actinic ray-sensitive or radiation-sensitive film with a plurality of electron beams; and a step of developing the actinic ray-sensitive or radiation-sensitive film after the irradiation with electron beams is provided. The composition contains a resin (A), a photoacid generator (B), and an acid diffusion control agent (C) and a molar ratio (Qp) between the photoacid generator (B) and the acid diffusion control agent (C), which is represented by Equation (1) is 0.3 or greater.Qp (molar ratio)=Acid diffusion control agent (C)/Photoacid generator (B)  (1)