Resist Film Pattern Formation with Multi-Solvent Developer
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Solution Overview
Problem
Existing pattern forming methods struggle to achieve both high critical resolution and in-plane evenness of resolution simultaneously.
Innovation Solution
A pattern forming method involving the use of a resist film formed with a radiation-sensitive resin composition, where the resin's molecular weight reduces upon exposure, and the film is developed using a chemical solution containing multiple organic solvents, including at least one with a boiling point of 100°C or more.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a conventional positive chemical amplification method is used, then sensitivity is improved through light absorption compensation, but critical resolution and in-plane evenness of resolution cannot be enhanced simultaneously
Solution Approach 1:
The patent changes the chemical parameters of the resist composition by incorporating specific compounds (compounds of formula 1, photoacid generators, and resins with specific structures) that modify the chemical amplification process. This allows simultaneous improvement in critical resolution and in-plane evenness by controlling the chemical reactions during exposure and development.
Solution Approach 2:
The patent uses a composite resist composition containing multiple components working together: compounds of formula 1 with specific functional groups, photoacid generators, and resins with controlled molecular weights and structures. This composite approach enables both high critical resolution and uniform in-plane evenness by combining the synergistic effects of different materials.
2Measurement precision
If shorter wavelength light sources and higher numerical apertures are used, then critical resolution is improved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent changes the chemical parameters of the resist to be more responsive to conventional exposure conditions, allowing high critical resolution to be achieved without requiring extreme ultraviolet or electron beam equipment. The modified chemical amplification process enables better pattern formation with existing ArF excimer laser systems.
Solution Approach 2:
The patent uses a disposable resist composition formulation that can be applied with conventional equipment rather than requiring expensive, complex exposure systems. This approach achieves high resolution patterns using readily available ArF excimer laser equipment instead of costly EUV or EB tools.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances both critical resolution and in-plane evenness of the pattern, ensuring a more precise and uniform outcome.
Implementation Method 1
a molecular weight of the resin X reducing as a result of a backbone of the resin X being broken by an action of exposure, an acid, or a base
Implementation Method 2
a step 3 of developing the resist film with a developer including an organic solvent to remove an exposed portion to form a pattern
Data Source
AI summary
An object of the present invention is to provide a pattern forming method with which a pattern excellent in terms of critical resolution and the in-plane evenness of resolution may be formed. Another object of the present invention is to provide a method for producing an electronic device in which the pattern forming method is used.A pattern forming method according to the present invention is a pattern forming method including a step 1 of forming a resist film on a substrate with an actinic ray- or radiation-sensitive resin composition including a resin X, a molecular weight of the resin X reducing as a result of a backbone of the resin X being broken by an action of exposure, an acid, or a base, a step 2 of exposing the resist film to light, and a step 3 of developing the resist film with a developer including an organic solvent to remove an exposed portion to form a pattern. The pattern forming method may further include a step 4 of cleaning the pattern using a rinse liquid including an organic solvent subsequent to the step 3. In the case where the pattern forming method does not include the step 4 subsequent to the step 3, the developer is a chemical solution including two or more types of organic solvents. In the case where the pattern forming method includes the step 4 subsequent to the step 3, at least one of the developer or the rinse liquid is a chemical solution including two or more types of organic solvents. The chemical solution including two or more types of organic solvents includes at least an organic solvent having a boiling point of 100° C. or more.