Resist Underlayer Film Composition for Etching and Pattern Embedding
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Solution Overview
Problem
Existing metal hardmask compositions struggle to effectively etch and embed patterns on semiconductor substrates, particularly those with features like trenches or holes, due to insufficient etching resistance and embeddability.
Innovation Solution
A composition for film formation is developed, comprising a metal compound, an aromatic compound with a specific aromatic hydrocarbon ring structure, and a solvent, which forms a resist underlayer film that enhances etching resistance and embeddability, allowing for the formation of well-patterned semiconductor substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing metal hardmask compositions are used, then the etching process can be performed, but the etching resistance is insufficient and pattern embedding capability is poor
Solution Approach 1:
The invention uses a composite material consisting of a metal compound (such as aluminum, gallium, indium, or their oxides/hydroxides) combined with a specific aromatic compound containing a naphthalene ring structure. This composite formulation creates a resist underlayer film that simultaneously provides both etching resistance and pattern embedding capability, resolving the contradiction between these two properties that plagues existing metal hardmask compositions.
Solution Approach 2:
The invention changes the chemical composition parameters of the resist underlayer film by incorporating aromatic compounds with naphthalene ring structures (having specific molecular weight ranges of 100-500 g/mol). This parameter change in the material composition enables the film to achieve both high etching resistance and good embeddability, transforming the performance characteristics to simultaneously satisfy both requirements.
2Reliability
If a resist underlayer film is formed to improve etching resistance, then etching performance improves, but the ability to embed patterns into substrates with trenches or holes deteriorates
Solution Approach 1:
The resist underlayer film is formulated as a composite material containing metal compounds (Al, Ga, In, or their oxides/hydroxides) and aromatic compounds with naphthalene ring structures. This composite structure provides both the etching resistance needed for reliable pattern transfer and the embeddability required to effectively fill trenches and holes, simultaneously improving both etching performance and pattern embedding capability.
Solution Approach 2:
The invention modifies the chemical composition parameters of the resist underlayer film by incorporating aromatic compounds with specific molecular weights (100-500 g/mol) containing naphthalene ring structures. This parameter optimization enables the film to achieve both high etching resistance and good flow properties for pattern embedding, resolving the trade-off between these two critical manufacturing requirements.
Data Source
AI summary
A method for manufacturing a semiconductor substrate includes applying a composition for film formation to a substrate. The composition includes: a metal compound; an aromatic compound including an aromatic hydrocarbon ring structure and a partial structure represented by formula (1); and a solvent. The aromatic hydrocarbon ring structure has 6 or more carbon atoms. X is a group represented by formula (i) (ii), (iii) or (iv). R1 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and R2 is a monovalent organic group having 1 to 20 carbon atoms. R3 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and R4 is a monovalent organic group having 1 to 20 carbon atoms. R5 is a monovalent organic group having 1 to 20 carbon atoms. R6 is a monovalent organic group having 1 to 20 carbon atoms.