Resist Film Patterning for Ultrafine 30 nm Resolution
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Solution Overview
Problem
In the manufacturing of semiconductor and circuit board devices, existing pattern forming methods face challenges in achieving high precision and stability for ultrafine patterns (30 nm or less) due to swelling phenomena during development, leading to reduced linearity and resolution.
Innovation Solution
A pattern forming method using an active-light-sensitive or radiation-sensitive resin composition with a phenolic hydroxyl group and an acid-decomposable group, combined with an organic solvent developer containing ester-based solvents with 8 or more carbon atoms, to suppress film permeation and dissolution, ensuring better pattern shape and sensitivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a developer is used in the developing step, then the resist pattern can be formed, but swelling phenomenon occurs causing reduced linearity and resolution
Solution Approach 1:
The invention changes the chemical parameters of the resist composition by introducing specific compounds: a phenolic hydroxyl group-containing compound, an acid-decomposable group-containing compound, and a basic compound. These parameter changes enable the resist to maintain its structural integrity during development, preventing swelling while allowing controlled dissolution of exposed areas.
Solution Approach 2:
The invention uses a composite resist composition containing multiple functional components working together: the phenolic hydroxyl group-containing compound provides structural stability, the acid-decomposable group enables selective dissolution, and the basic compound neutralizes acid to prevent unwanted swelling. This composite approach resolves the contradiction between formability and linearity.
2Productivity
If the pattern size is reduced to ultrafine size (30 nm or less), then higher integration is achieved, but swelling and collapse occur reducing resolution
Solution Approach 1:
The invention modifies the chemical parameters of the resist system by incorporating specific functional groups and compounds that provide both sensitivity for ultrafine patterning and structural support to prevent collapse. The basic compound particularly helps maintain dimensional stability at 30 nm scale.
Solution Approach 2:
The basic compound acts as an intermediary that neutralizes excess acid generated during exposure, preventing over-swelling that would cause pattern collapse. This mediator enables the formation of stable ultrafine patterns by controlling the chemical environment during development.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances sensitivity, resolving performance, and pattern shape by preventing film collapse and maintaining resist film integrity, even with small exposure doses, thereby achieving high precision in forming ultrafine patterns.
Implementation Method 1
a compound (B) that generates an acid upon irradiation with active light or radiation
Implementation Method 2
a repeating unit having a group that decomposes by the action of an acid to generate a carboxyl group
Data Source
AI summary
A pattern forming method includes, in this order, forming a film on a substrate, using an active-light-sensitive or radiation-sensitive resin composition containing a resin (A) which has a repeating unit having a phenolic hydroxyl group, and a repeating unit having a group that decomposes by the action of an acid to generate a carboxyl group, and a compound (B) that generates an acid upon irradiation with active light or radiation; exposing the film; and developing the exposed film using a developer including an organic solvent, in which the developer including an organic solvent contains an organic solvent having 8 or more carbon atoms and 2 or less heteroatoms in the amount of 50% by mass or more.