Light-Emitting Element Resist Film Protrusion Pulling
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Solution Overview
Problem
The existing method of manufacturing light-emitting elements risks obstruction by overhanging resist film portions, which can prevent the barrier film from covering the reflecting film ends and lead to migration of the reflecting film.
Innovation Solution
A method involving the formation of a resist film with a protrusion that is pulled upward by temperature changes, allowing the second metal film to exert tensile stress and widen the space between the protrusion and the semiconductor layer, ensuring the third metal film can cover the end of the first metal film effectively, thereby preventing migration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If an overhanging resist film is formed to define the metal film pattern, then the metal film can be formed in the desired pattern, but the overhanging portion may obstruct the barrier film from covering the reflecting film end, leading to migration
Solution Approach 1:
The resist film is formed with an overhanging portion that extends beyond the metal film formation region. This overhanging portion is then pulled upward by tensile stress from the second metal film during temperature cycling, creating space for the third metal film to permeate and cover the first metal film end before the resist is removed. This preliminary structural preparation enables subsequent reliable coverage.
Solution Approach 2:
The resist film transitions from a static overhanging structure to a dynamic structure that changes shape during temperature cycling. The upward pulling of the overhanging portion by tensile stress creates the necessary space for metal film permeation, demonstrating dynamic structural adjustment to resolve the coverage issue.
2Reliability
If the overhanging portion is pulled upward to create space for metal film permeation, then the third metal film can cover the first metal film end, but the space must be sufficiently widened to ensure reliable coverage
Solution Approach 1:
The space width is controlled by changing physical parameters during temperature cycling. The tensile stress applied to the resist film varies with temperature changes, dynamically adjusting the space width to ensure sufficient permeation depth for the third metal film while maintaining manufacturing precision.
Solution Approach 2:
The temperature cycling process provides feedback control for the space width. By monitoring temperature changes and the resulting tensile stress on the resist film, the process ensures that the space is widened sufficiently for reliable metal film coverage without excessive widening that would compromise pattern precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures reliable coverage of the first metal film end by the third metal film, enhancing the reliability and light extraction efficiency of the light-emitting element by suppressing migration.
Implementation Method 1
tensile stress of the second metal film is exerted to pull the protrusion upward
Implementation Method 2
pulling the protrusion of the resist film upward by raising and then lowering a temperature of the wafer
Implementation Method 3
the third metal film sufficiently permeates the space
Data Source
AI summary
A method of manufacturing a light-emitting element including, in the following order, steps of: preparing a wafer on which a semiconductor layer including an light-emission layer is formed; forming a resist film comprising a main body and a protrusion; forming a first metal film; forming a second metal film on the resist film and on the first metal film; pulling the protrusion of the resist film upward by raising and then lowering a temperature of the wafer; forming a third metal film on the second metal film and covering an end of the first metal film by the third metal film; and removing the resist film. In the step of forming the second metal film, the end of the first metal film is exposed from the second metal film.