Resist Composition Filtration for Ultrafine Pattern Resolution
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Solution Overview
Problem
Existing resist compositions used in semiconductor manufacturing suffer from deterioration in pattern resolution and residual defects, particularly in the formation of ultrafine patterns with line widths of 20 nm or less, due to the presence of foreign matter with chemically or physically different characteristics.
Innovation Solution
A composition comprising a cation with a metal atom and a ligand, filtered through a polyethylene-based resin with a pore diameter ≤ 50 nm, undergoing circulation filtration to reduce particles ≤ 0.15 µm to ≤ 10 per mL, enhancing pattern resolution and reducing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a resist composition is used in semiconductor manufacturing, then pattern formation is achieved, but foreign matter remains in the composition causing deterioration in pattern resolution and generation of residual defects
Solution Approach 1:
The patent applies preliminary action by implementing filtration treatment before the resist composition is used in pattern formation. The composition is filtered through a filter with pore diameter of 0.01 to 0.1 μm to remove foreign matter in advance, preventing resolution deterioration and residual defects during subsequent lithography processes
Solution Approach 2:
The patent extracts harmful foreign matter from the resist composition through filtration. The filter apparatus selectively removes particles and contaminants while allowing the beneficial components of the resist composition to pass through, thereby purifying the composition without losing its essential functionality
2Ease of manufacture
If foreign matter is present in the resist composition, then the composition can be used as-is, but pattern resolution deteriorates and residual defects occur in ultrafine patterns
Solution Approach 1:
The patent implements preliminary filtration action before the resist composition enters the lithography process. By filtering the composition in advance through a filter with appropriate pore size, the patent ensures that foreign matter is removed prior to pattern formation, maintaining both ease of manufacture and ultrafine pattern resolution
Solution Approach 2:
The patent changes the physical state and purity parameters of the resist composition by implementing filtration. The filtration process modifies the composition's particle count and purity levels, transforming it from a state containing foreign matter to a purified state suitable for high-resolution ultrafine pattern formation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the formation of ultrafine patterns with excellent resolution and minimal residual defects, particularly for patterns with line widths of 20 nm or less, by effectively purifying the actinic ray-sensitive or radiation-sensitive composition.
Implementation Method 1
subjecting a solution of an actinic ray-sensitive or radiation-sensitive composition containing a cation including a metal atom and a ligand to circulation filtration using a filter of a polyethylene-based resin with a pore diameter ≤ 50 nm
Data Source
Figure 1~2
AI summary
Provided are an actinic ray-sensitive or radiation-sensitive composition capable of forming a pattern having excellent resolution and few residual defects, a method for purifying an actinic ray-sensitive or radiation-sensitive composition, a pattern forming method including the method for purifying an actinic ray-sensitive or radiation-sensitive composition, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive composition containing a metal cation and a ligand is an actinic ray-sensitive or radiation-sensitive composition, in which the number of particles in liquid having particle diameters of 0.15 µm or less included in 1 mL of the composition is 10 or less.