Resist Composition Fluorine Additive Sub-100nm Pattern Quality

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Solution Overview

Problem

Current resist compositions face challenges in maintaining defect number, pattern shape, and roughness, especially in forming fine patterns with dimensions less than 100 nm, as they struggle to achieve optimal lithography characteristics.

Innovation Solution

A resist composition that includes a base material component and a fluorine additive component, where the base material component has a high-molecular-weight compound with specific constitutional units and the fluorine additive component contains high-molecular-weight compounds with acid-dissociable groups, generating an acid upon exposure to change solubility in developing solutions, thereby improving pattern formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a high-molecular-weight compound with two specific constitutional units is employed to improve lithography characteristics, then sensitivity and resolution are improved, but defect number, pattern shape, and roughness cannot be maintained favorably

Engineering Contradiction:
Improvelithography characteristicsVSAvoiddefect number, pattern shape, and roughness
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent uses a composite resin system combining multiple high-molecular-weight compounds with different constitutional units (lactone-containing units for sensitivity, aromatic units for resolution, and fluorine-containing units for defect reduction). This composite approach allows simultaneous optimization of lithography characteristics and pattern quality without compromising reliability

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent introduces fluorine-containing constitutional units at specific proportions (0.1-10 mol%) within the resin structure to locally modify properties. This localized modification targets defect reduction and roughness control while preserving the overall lithography performance provided by the other constitutional units

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If pattern miniaturization is pursued to achieve fine patterns with width less than 100 nm, then resolution is improved, but maintaining defect number, pattern shape, and roughness becomes difficult

Engineering Contradiction:
Improvepattern width dimensionVSAvoiddefect number, pattern shape, and roughness
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent changes the chemical composition parameters of the resist material by incorporating fluorine-containing constitutional units with specific proportions. This parameter modification reduces surface tension and improves developing uniformity, enabling reliable formation of sub-100nm patterns with controlled defects and roughness

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The fluorine-containing units are incorporated at controlled proportions (0.1-10 mol%) to locally modify the resist properties at the molecular level, affecting surface characteristics and developing behavior specifically to maintain pattern quality at miniaturized dimensions

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The resist composition achieves excellent lithography characteristics, including reduced defects, improved pattern shape, and surface roughness, enabling the formation of high-quality resist patterns with fine dimensions.

Implementation Method 1

a chemically amplified resist composition containing a base material component whose solubility in a developing solution changes by the action of an acid and an acid generator component that generates an acid by exposure

Methodology Applied
Scientific EffectPhotoacid generation: Photopolymerisation

Data Source

PatentUS11977330B2Resist composition and method of forming resist pattern
Publication Date: 2024.05.07 TOKYO OHKA KOGYO CO LTD
  • US11977330B2 patent drawing
  • US11977330B2 patent drawing
  • US11977330B2 patent drawing

AI summary

A resist composition which generates an acid by exposure and whose solubility in a developing solution changes by the action of an acid. The resist composition contains a high-molecular-weight compound having a constitutional unit represented by General Formula (a0-1), and a high-molecular-weight compound having a constitutional unit represented by General Formula (f01-1) and a constitutional unit including an acid-dissociable group represented by General Formula (f02-r-1). In the formulas, R represents a hydrogen atom or the like; Va01 represents a divalent linking group; na01 represents an integer of 0 to 2; Ra01 is a lactone-containing cyclic group having a cyano group or the like; Vf01 represents a divalent linking group; Rf011 and Rf012 each represents a trifluoromethyl group or the like; Rf021 and Rf022 each represents an alkyl group having 1 to 3 carbon atoms; and Rf023 represents a polycyclic aliphatic hydrocarbon group