Sequential Resist Infiltration for Etch-Resistant Fine Patterns
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Solution Overview
Problem
High resolution polymer resists used in semiconductor patterning techniques face challenges with low etch resistance and high line edge roughness, making it difficult to transfer patterns to underlying layers effectively.
Innovation Solution
A sequential infiltration apparatus is developed, comprising a reaction chamber, a precursor distribution and removal system, and a sequence controller to control the infiltration process by activating and removing precursors in specific periods, ensuring deep infiltration and minimizing surface deposition, thereby tuning the infiltration process and improving etch resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a thin polymer resist layer is used to achieve high resolution patterning, then resolution is improved, but etch resistance deteriorates
Solution Approach 1:
The patent divides the single-layer resist structure into multiple layers by sequentially infiltrating different materials (first infiltrateable material and second infiltrateable material) into the polymer resist. This creates a multi-layered patterned structure where each layer can have different properties, allowing the thin resist to maintain both high resolution and improved etch resistance through the combined structure.
Solution Approach 2:
The patent creates a composite patterned structure by combining the polymer resist with multiple infiltrateable materials that have different etch resistance properties. The first and second infiltrateable materials form a composite structure within the resist, providing enhanced etch resistance while maintaining the high resolution defined by the thin polymer layer.
2Manufacturing precision
If a thin polymer resist layer is used to achieve high resolution patterning, then resolution is improved, but line edge roughness increases
Solution Approach 1:
The patent segments the resist structure into multiple infiltrated layers, where the first and second infiltrateable materials are sequentially deposited into the polymer resist. This segmentation allows for better control of line edges through the structured infiltration process, reducing roughness while maintaining the thin profile needed for high resolution.
Solution Approach 2:
The patent changes the physical and chemical parameters of the resist structure by controlling the infiltration process parameters (temperature, pressure, time sequences T1, T2, T3). By optimizing these parameters, the infiltration of materials is controlled to produce smooth line edges while maintaining the thin resist layer necessary for high resolution patterning.
3Manufacturing precision
If the first precursor is provided for a long period to enable deep infiltration, then infiltration depth is improved, but process time increases
Solution Approach 1:
The patent uses periodic action by implementing sequential infiltration cycles with specific time periods (T1 for first precursor, T2 for removal, T3 for second precursor). This periodic provision and removal of precursors allows deep infiltration to be achieved through repeated cycles rather than requiring one continuously long exposure, thereby reducing total process time while maintaining infiltration depth.
Solution Approach 2:
The patent maintains continuity of useful action by overlapping the infiltration and removal processes in the sequential cycles. While the first precursor is being removed during period T2, the system is prepared for the second precursor introduction during period T3, ensuring that the useful infiltration action continues without unnecessary idle time, thus achieving deep infiltration with optimized process time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus enhances the etch resistance and reduces line edge roughness of patterned structures, facilitating better pattern transfer to underlying layers by optimizing the infiltration process.
Implementation Method 1
activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber
Implementation Method 2
activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2
Implementation Method 3
activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber
Data Source
AI summary
A sequential infiltration synthesis apparatus comprising:a reaction chamber constructed and arranged to hold at least a first substrate;a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and,a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by:activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber;activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and,activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber. The program in the memory is programmed with the first period T1 longer than the second period T2.