Resist Composition Manufacturing with Metal Impurity Control

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Solution Overview

Problem

In semiconductor manufacturing, the miniaturization of circuit patterns leads to increased aspect ratios of photoresist patterns, causing pattern collapse and reduced precision in pattern transfer due to metal impurities from equipment and materials, resulting in defects like open abnormalities and short-circuits in semiconductor apparatuses.

Innovation Solution

A process involving repeated cleaning and analysis of manufacturing apparatuses with cleaning solutions until metal component concentrations reach 5 ppb or less, using advanced analytical tools like ICP-MS, to produce resist compositions with reduced metal content, specifically employing organic resist compositions with aromatic compounds and silicon-containing polysiloxane compositions for improved etching and coating performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Stability of the object's composition

If the photoresist film thickness is thinned to reduce aspect ratio during miniaturization, then pattern collapse is prevented, but precision of pattern transfer to substrate is lowered

Engineering Contradiction:
Improveaspect ratio of photoresist patternVSAvoidprecision of pattern transfer
Core Design Contradiction:
Stability of the object's compositionVSManufacturing precision

Solution Approach 1:

The patent transitions from a single-layer resist system to a multi-layer resist system, adding a vertical dimension of complexity. By introducing an underlayer film with different etching selectivity between the underlayer and photoresist, the system achieves both low aspect ratio (improved stability) and high pattern transfer precision through the additional functional layer that enhances etching contrast without requiring thinner photoresist films.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Manufacturing precision

If multilayer resist method is used to improve pattern transfer precision, then coating defects increase due to metal impurities from environment, apparatus, and starting materials

Engineering Contradiction:
Improveprecision of pattern transferVSAvoidcoating defects from metal impurities
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent implements preliminary purification of starting materials before resist composition preparation, and establishes preliminary cleaning protocols for the manufacturing apparatus. By pre-purifying polymers and other starting materials, and pre-cleaning equipment to reduce metal impurity levels, the system prevents metal contamination from affecting the multi-layer resist process, thereby maintaining both high pattern transfer precision and low coating defect rates.

Inventive Principle:
Principle #10Preliminary action

3Object-affected harmful factors

If purification of starting materials is performed to reduce metal impurities, then coating defects are reduced, but it is not sufficient for most advanced process requirements

Engineering Contradiction:
Improvecoating defectsVSAvoidfine processing capability
Core Design Contradiction:
Object-affected harmful factorsVSManufacturing precision

Solution Approach 1:

The patent establishes specific quantitative parameters for metal impurity control, requiring total metal content to be 5 ppb or less, with particular emphasis on limiting Fe, Cr, and Ni to 2 ppb or less. By defining and enforcing these stringent numerical thresholds for metal contamination, the system achieves the ultra-low defect levels required for advanced fine processing applications, going beyond generic purification approaches.

Inventive Principle:
Principle #35Parameter changes

4Object-affected harmful factors

If repeated cleaning and analysis is performed until metal component concentration reaches 5 ppb or less, then coating defects are reduced, but manufacturing time and complexity increase

Engineering Contradiction:
Improvecoating defectsVSAvoidcleaning and analysis time
Core Design Contradiction:
Object-affected harmful factorsVSLoss of time

Solution Approach 1:

The patent implements a feedback-controlled cleaning process where metal impurity levels in the resist composition are continuously monitored through analysis, and cleaning operations are adjusted based on measured contamination levels. This closed-loop approach with metal content measurement feedback enables the system to achieve the 5 ppb target concentration efficiently by adapting cleaning intensity to actual contamination states, reducing unnecessary cleaning cycles while ensuring defect-free results.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS10603696B2Process for manufacturing resist composition and patterning process
Publication Date: 2020.03.31 SHIN ETSU CHEMICAL CO LTD
  • US10603696B2 patent drawing
  • US10603696B2 patent drawing
  • US10603696B2 patent drawing

AI summary

This is to provide a process for manufacturing a resist composition which can prepare a resist composition lowered in coating defects, andthe manufacturing process is a process for manufacturing a resist composition to be used in a process for manufacturing a semiconductor apparatus, the process comprising the steps of:cleaning a manufacturing apparatus for a resist composition with a cleaning solution;analyzing the cleaning solution taken out from the manufacturing apparatus;repeating the step of cleaning and the step of analyzing until a concentration of metal components contained in the cleaning solution becomes 5 ppb or less; andmanufacturing the resist composition by using the manufacturing apparatus after the step of repeating.