Three-Layer Resist Mask for Uniform Josephson Junction Resistance

The patent divides the single thick resist mask into multiple thinner resist layers (first resist layer, second resist layer, third resist layer). Each layer has aligned openings that collectively define the final pattern. This segmentation reduces shadowing effects during deposition because each thinner layer casts less shadow, and the aligned openings ensure uniform material deposition through all layers, resolving the contradiction between productivity and manufacturing precision.

The patent creates different local qualities in the resist mask structure by using multiple layers with different thicknesses and opening dimensions. The first, second, and third resist layers have progressively smaller opening widths (first opening width > second opening width > third opening width), which compensates for shadowing effects at different depths during angled deposition. This local variation in opening dimensions ensures uniform junction formation despite the angled deposition approach.

The patent performs preliminary patterning of multiple resist layers with precisely aligned openings before the deposition process. This preliminary structuring creates a controlled template that guides material deposition uniformly across all junction sites. By establishing this precise geometric framework in advance, the patent prevents grain growth variations from causing resistance inconsistencies, as the aligned openings ensure uniform nucleation and growth conditions for all junctions.