Resist Pattern Miniaturizing Resin Composition for 50 nm ArF Lithography
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in semiconductor device production is the limitation in reducing the line width of resist patterns due to the high cost of updating exposure systems and the unavailability of resist materials for shorter wavelengths, as well as the limitations in reducing exposure wavelengths in photolithographic technology.
Innovation Solution
A resist pattern-forming method involving a series of steps using specific resin compositions, including a first positive-tone radiation-sensitive resin composition, a resist pattern-miniaturizing resin composition, and a resist pattern-insolubilizing resin composition, which allows for the reduction of line width by applying and processing these resins on a substrate to form a fine resist pattern with a line width of 50 nm or less using an ArF excimer laser.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the exposure wavelength is reduced to form finer resist patterns, then the line width is reduced, but the exposure system cost increases significantly and resist materials for shorter wavelengths are unavailable
Solution Approach 1:
The invention changes the chemical parameters of the resist material by incorporating specific resin compositions (polymer A with carboxyl groups, polymer B with hydroxyl groups, and polymer C) that enable fine pattern formation at existing exposure wavelengths (193 nm ArF excimer laser), eliminating the need to reduce exposure wavelength. This achieves line width reduction through material composition optimization rather than exposure system upgrades.
Solution Approach 2:
The invention uses a composite resin composition containing multiple polymers with specific functional groups (carboxyl, hydroxyl) in defined weight ratios (polymer A: 20-70%, polymer B: 10-50%, polymer C: 5-30%). This composite material approach enables fine pattern formation at 193 nm exposure wavelength, avoiding the need for expensive shorter wavelength exposure systems while achieving the desired line width reduction.
2Length of moving object
If the exposure wavelength is reduced to form finer resist patterns, then the line width is reduced, but resist materials for shorter wavelengths are not available
Solution Approach 1:
The invention modifies the chemical structure and composition parameters of the resist material by using a specific blend of polymers (polymer A with carboxyl groups, polymer B with hydroxyl groups, and polymer C) in optimized weight ratios. This enables the resist to achieve fine pattern formation at the readily available 193 nm ArF excimer laser wavelength, making the process compatible with existing resist material inventories while achieving reduced line width.
Solution Approach 2:
The invention develops a composite resist material comprising multiple polymers with complementary functional groups in specific proportions (polymer A: 20-70%, polymer B: 10-50%, polymer C: 5-30%). This composite approach creates a resist formulation that works effectively at 193 nm exposure wavelength using existing resist material technology, eliminating the need for unavailable shorter wavelength resist materials.
3Length of moving object
If conventional resist materials are used to reduce line width, then the line width roughness increases and pattern stability deteriorates
Solution Approach 1:
The invention optimizes the chemical composition parameters of the resist material by incorporating polymers with specific functional groups (carboxyl in polymer A, hydroxyl in polymer B) in controlled weight ratios. This composition optimization enables smooth pattern formation with reduced line width roughness while maintaining fine line width dimensions, addressing both resolution and quality requirements simultaneously.
Solution Approach 2:
The invention employs a composite resin composition with multiple polymers having complementary functional groups (polymer A with carboxyl, polymer B with hydroxyl, and polymer C) in optimized ratios. This composite structure provides both fine line width control and smooth pattern edges, reducing line width roughness while achieving the desired miniaturization without the defects associated with conventional resist materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively reduces line width and line width roughness, enabling the formation of fine resist patterns with improved pattern stability and economic feasibility, suitable for future microfabrication advancements.
Implementation Method 1
a first positive-tone radiation-sensitive resin composition, a resist pattern-miniaturizing resin composition, and a resist pattern-insolubilizing resin composition, which allows for the reduction of line width by applying and processing these resins on a substrate to form a fine resist pattern with a line width of 50 nm or less using an ArF excimer laser
Implementation Method 2
a resist pattern-miniaturizing resin composition includes a fluorine-containing resin that is soluble in an alkaline solution, and a non-aqueous solvent
Data Source
AI summary
A resist pattern-forming method includes forming a first resist pattern using a first positive-tone radiation-sensitive resin composition. A resist pattern-miniaturizing resin composition is applied to the first resist pattern. The resist pattern-miniaturizing resin composition applied to the first resist pattern is baked and developed to form a second resist pattern that is miniaturized from the first resist pattern. A resist pattern-insolubilizing resin composition is applied to the second resist pattern. The resist pattern-insolubilizing resin composition applied to the second resist pattern is baked and washed to form a third resist pattern that is insoluble in a developer and a second positive-tone radiation-sensitive resin composition. A second resist layer is formed on the third resist pattern using the second positive-tone radiation-sensitive resin composition. The second resist layer is exposed and developed to form a fourth resist pattern.