Resist-Modifying Composition for Double Patterning Integrity

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Solution Overview

Problem

Current double patterning processes in lithography require multiple dry etchings, leading to reduced throughput and pattern misregistration due to the difficulty in retaining the first resist pattern during the transition to a second resist process, and existing resist-modifying techniques fail to adequately prevent deformations and misregistration.

Innovation Solution

A pattern forming process using a resist-modifying composition comprising a copolymer with lactone and acid labile groups, applied to the first resist pattern to inactivate it for the second resist process, allowing a single dry etching step while maintaining the first pattern's integrity through the use of a specific base resin and alcohol-based solvent.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If multiple dry etching steps are used in double patterning process, then fine feature patterns can be formed, but throughput is reduced and pattern misregistration occurs

Engineering Contradiction:
Improvepattern precisionVSAvoidthroughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The first resist pattern is treated with a resist-modifying composition before the second resist process to inactivate it and prevent dissolution during subsequent steps. This preliminary modification allows the first pattern to be retained through the second etching step without requiring multiple dry etchings, thereby improving throughput while maintaining pattern precision

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

A resist-modifying composition serving as an intermediary substance is applied to the first resist pattern. This composition contains a base resin and alcohol-based solvent that modify the first resist pattern's properties, enabling it to withstand the second resist process and subsequent etching without dissolution, thus eliminating the need for multiple dry etching steps

Inventive Principle:
Principle #24Intermediary (Mediator)

2Adaptability or versatility

If the first resist pattern is treated to enable second resist process, then double patterning can be achieved, but the first resist pattern deforms and misregistration occurs

Engineering Contradiction:
Improveprocess adaptabilityVSAvoidpattern registration accuracy
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The resist-modifying composition changes the chemical and physical parameters of the first resist pattern through the action of base resin and alcohol-based solvent. This parameter modification inactivates the first resist pattern, preventing it from dissolving in alkaline developers during the second resist process while maintaining its structural integrity and registration accuracy

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The resist-modifying composition uses a composite formulation combining base resin with alcohol-based solvent. This composite material works synergistically to modify the first resist pattern's properties, providing both inactivation and structural support to prevent deformation during the second patterning process

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The process enables the formation of fine feature patterns with improved throughput and reduced misregistration by retaining the first resist pattern's integrity during the second patterning process, achieving satisfactory profile retention and enhanced process efficiency.

Implementation Method 1

treating the first resist pattern with a resist-modifying composition for inactivation to a second resist process

Methodology Applied
Scientific EffectChemical modification:

Implementation Method 2

a resist-modifying composition comprising a copolymer with lactone and acid labile groups, applied to the first resist pattern

Methodology Applied
Scientific EffectSolvation: Solvation

Data Source

PatentUS8329384B2Resist-modifying composition and pattern forming process
Publication Date: 2012.12.11 SHIN ETSU CHEMICAL CO LTD
  • US8329384B2 patent drawing
  • US8329384B2 patent drawing
  • US8329384B2 patent drawing

AI summary

A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.