Developable Resist Overlayer Composition for Thick Fine Patterns

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Solution Overview

Problem

Current methods for manufacturing resist patterns face challenges such as thickening fine resist patterns, achieving high-resolution patterns with increased numerical aperture, and maintaining pattern shape and aspect ratio, while also requiring a wider process window and improved manufacturing yield.

Innovation Solution

A developable resist overlayer composition comprising a hydrocarbon compound and a solvent, where the hydrocarbon compound is represented by a specific formula or a polymer derived from it, and the solvent includes a compound that facilitates the formation of a resist overlayer which can be developed to thicken the resist pattern.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Length of stationary object

If a resist pattern is thickened by applying a polymer-containing composition after development, then the width of the resist pattern is increased, but the resolution and pattern shape deteriorate

Engineering Contradiction:
Improveresist pattern thicknessVSAvoidpattern resolution
Core Design Contradiction:
Length of stationary objectVSManufacturing precision

Solution Approach 1:

The patent applies the resist overlayer composition before the development step, rather than after. This preliminary application allows the overlayer to be formed while the resist pattern is still intact, enabling the overlayer to protect and maintain pattern shape during subsequent processing while still achieving the desired thickness increase.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent divides the resist system into two functional layers: the base resist layer that provides pattern definition and the overlayer that provides thickness and protection. This segmentation allows each layer to optimize its function without compromising the other, resolving the contradiction between thickness and resolution.

Inventive Principle:
Principle #1Segmentation

2Manufacturing precision

If the numerical aperture of the exposure apparatus is increased to achieve finer patterns, then the resolution is improved, but the depth of focus decreases making it difficult to obtain patterns with good shape

Engineering Contradiction:
Improvepattern resolutionVSAvoiddepth of focus
Core Design Contradiction:
Manufacturing precisionVSEase of operation

Solution Approach 1:

The patent adds a vertical dimension by applying the resist overlayer composition after exposure and development. This allows the pattern to be thickened in the vertical direction without affecting the horizontal resolution achieved by the high numerical aperture exposure system, effectively decoupling resolution from depth of focus constraints.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Strength

If the resist film thickness is increased to improve pattern durability, then the aspect ratio and mask performance are improved, but the process window narrows and manufacturing yield decreases

Engineering Contradiction:
Improvepattern durabilityVSAvoidmanufacturing yield
Core Design Contradiction:
StrengthVSProductivity

Solution Approach 1:

The resist overlayer composition is applied preliminarily after exposure but before final development and processing. This timing allows the overlayer to be in place to protect the pattern and improve durability, while the underlying resist layer remains intact to maintain process window and enable successful development, thus improving both durability and yield.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS20250085635A1Developable resist overlayer composition as well as method for manufacturing resist overlayer pattern and resist pattern
Publication Date: 2025.03.13 MERCK PATENT GMBH
  • US20250085635A1 patent drawing
  • US20250085635A1 patent drawing
  • US20250085635A1 patent drawing

AI summary

A developable resist overlayer composition as well as a method for manufacturing a resist overlayer pattern and a resist pattern are provided.