Resist Pattern Formation Using Alcohol-Based Solvent Mediator
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Solution Overview
Problem
The double patterning method in semiconductor manufacturing faces challenges in forming high-resolution resist patterns due to the mixing phenomenon between the first and second resist compositions, which hinders the formation of dense and precise resist patterns.
Innovation Solution
A method involving the sequential application of positive and negative resist compositions, where a positive resist composition is first exposed and developed to form a pattern, followed by the application of a negative resist composition containing an alcohol-based organic solvent to create a denser resist pattern using a second mask pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a double patterning method is used to form high-resolution resist patterns, then the resolution and density of the resist pattern can be improved, but the mixing phenomenon between the first and second resist compositions occurs, which deteriorates the manufacturing precision and pattern quality
Solution Approach 1:
The patent introduces an organic solvent as an intermediary substance between the first and second resist compositions. This solvent acts as a barrier that prevents the mixing phenomenon while allowing the sequential application and development processes to proceed effectively, thereby maintaining high-resolution patterning without composition contamination
Solution Approach 2:
The patent changes the chemical parameters of the resist system by introducing an organic solvent with specific properties (alcohol-based). This parameter change modifies the interaction between resist layers, preventing unwanted mixing while preserving the lithographic performance and enabling successful double patterning
2Quantity of substance
If a negative resist composition is applied after a positive resist pattern is formed, then the density of the final resist pattern can be enhanced, but the mixing phenomenon between different resist compositions occurs, which worsens the pattern precision
Solution Approach 1:
The organic solvent serves as a mediator that enables the negative resist to be applied over the developed positive resist pattern without causing mixing. It creates a compatible interface between the two different resist compositions, allowing density enhancement while preserving pattern precision
Solution Approach 2:
The patent applies different resist compositions (positive and negative) in specific sequential steps with the organic solvent providing localized compatibility control. This local quality approach ensures that each resist layer performs its intended function (pattern formation and density enhancement) without interfering with the other
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of high-resolution resist patterns by preventing the mixing of resist compositions and enhancing the density and precision of the resulting pattern, overcoming the limitations of traditional double patterning techniques.
Implementation Method 1
a resist film formed from a resist composition containing a base component such as a resin is formed on a support such as a substrate, the resist film is selectively exposed with irradiation such as light, an electron beam or the like through a mask (mask pattern) in which a predetermined pattern has been formed, and then a developing treatment is conducted, thereby forming a resist pattern of the prescribed shape in the resist film. A resist composition in which the exposed portions change to become soluble in a developing liquid is termed a positive resist composition
Implementation Method 2
a resist composition in which the exposed portions change to become insoluble in the developing liquid is termed a negative resist composition
Data Source
AI summary
Disclosed is a method of forming a resist pattern, including: applying a positive resist composition on a support 1 to form a first resist film 2; selectively exposing the first resist film 2 through a first mask pattern, and developing it to form a first resist pattern 3; applying a negative resist composition including an organic solvent (S″) containing an alcohol-based organic solvent on the support 1 that the first resist pattern 3 is formed, thereby forming a second resist film 6; and selectively exposing the second resist film 6 through a second mask pattern, and developing it to form a resist pattern denser than the first resist pattern 3.