Resist Pattern Dimension Correction in Photolithography
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Solution Overview
Problem
In photolithography processing for semiconductor devices, it is challenging to form both dense and sparse resist patterns in predetermined target dimensions simultaneously, as existing methods can only correct processing conditions based on the dimension measurement of one type of resist pattern, leading to inconsistent results for the other pattern.
Innovation Solution
A substrate processing method that involves performing first and second processing steps to form resist patterns with different dimensions, measuring these dimensions, and correcting the processing conditions for each step based on the measurement results to achieve the desired target dimensions for both patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single processing condition correction is applied to both dense and sparse resist patterns, then the processing can be simplified, but the dimensions of both resist patterns cannot be made appropriate at the same time
Solution Approach 1:
The invention divides the correction process into separate segments for dense and sparse resist patterns. Specifically, the control unit corrects the heating temperature based on dimension measurement results from dense resist patterns (P1), while separately correcting the developing solution temperature or discharge time based on dimension measurement results from sparse resist patterns (P2). This segmentation allows each pattern type to be optimized independently, resolving the contradiction where a single correction parameter cannot simultaneously satisfy both pattern types.
Solution Approach 2:
The invention creates a multi-functional correction system that can handle both dense and sparse resist patterns within a single integrated process. The control unit is designed to perform multiple correction functions: correcting heating temperature for dense patterns and correcting developing solution parameters for sparse patterns. This universal approach maintains system simplicity while achieving precise dimensional control for both pattern types simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the simultaneous formation of resist patterns with precise target dimensions, even when dense and sparse patterns are mixed, by adjusting processing conditions specifically for each pattern type, thereby improving the accuracy and reliability of photolithography processing.
Implementation Method 1
post-exposure baking processing (hereinafter, referred to as "PEB processing") of perform heating in order to accelerate the chemical reaction of the resist film
Data Source
AI summary
In the present invention, when dense and sparse resist patterns are formed above a substrate, respective resist pattern dimensions are measured, and a correction value for a first processing unit is calculated based on the dimension measurement result of the dense resist pattern and a correction value for a second processing unit is calculated based on the dimension measurement result of the sparse resist pattern. Based on these calculation results, processing conditions in the first processing unit and the second processing unit are changed, and thereafter processing in these processing units are implemented under these changed conditions.