Resist Pattern Heat Resistance via Metal Compound Developer
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Solution Overview
Problem
Existing resist pattern formation methods lack sufficient heat resistance and dry etching resistance, particularly in negative type developing processes, which are essential for creating fine patterns in semiconductor elements.
Innovation Solution
An organic solvent developer liquid containing a metal compound that generates a hydroxyl group upon hydrolysis, dissolved in an organic solvent without functional groups that react with the metal compound, is used to form a resist pattern with enhanced heat resistance and dry etching resistance, and a film composed of a metal-containing compound is formed on the resist pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional positive type developing process is used, then the process is simple and well-established, but the heat resistance and dry etching resistance of the resist pattern are insufficient
Solution Approach 1:
The patent changes the chemical composition parameters of the developer liquid by incorporating metal compounds (such as zinc, calcium, or aluminum salts) into the organic solvent system. This parameter modification enables the developer to form resist patterns with enhanced heat resistance and dry etching resistance without fundamentally altering the developing process workflow
Solution Approach 2:
The patent creates a composite developer liquid system by combining organic solvents with metal compounds. This composite formulation produces resist patterns that exhibit improved thermal and etching properties, effectively treating the resist pattern as a composite structure with enhanced performance characteristics
2Manufacturing precision
If a negative type developing process with organic solvent is used, then trench and hole patterns can be formed effectively, but the resist pattern lacks sufficient heat resistance and dry etching resistance
Solution Approach 1:
The patent modifies the chemical parameters of the negative type developer by adding metal compounds to the organic solvent system. This parameter change maintains the ability to form precise trench and hole patterns while simultaneously improving the heat resistance and dry etching resistance of the resulting resist patterns
3Productivity
If the resist pattern is heated for subsequent processing, then further semiconductor manufacturing steps can be performed, but the resist pattern undergoes shape changes due to insufficient heat resistance
Solution Approach 1:
The patent applies beforehand cushioning by incorporating metal compounds into the developer liquid before the developing process. These metal compounds deposit on the resist pattern during development, forming a protective layer that cushions the pattern against heat-induced shape changes during subsequent heating processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method provides resist patterns with excellent heat resistance and dry etching resistance, preventing shape changes during heating and maintaining pattern integrity, while avoiding contamination from fine particles.
Implementation Method 1
a metal compound (W) capable of generating a hydroxyl group upon hydrolysis
Implementation Method 2
dissolving a non-pattern part on the light exposed coating film in an organic solvent developer liquid
Data Source
AI summary
A method of forming a resist pattern, and a film including a metal-containing compound formed on the resist pattern while developing the resist pattern. The method uses an organic solvent developer liquid, in which a metal compound capable of generating a hydroxyl group upon hydrolysis is dissolved in an organic solvent that does not have a functional group that reacts with the metal compound.