Resist Pattern Formation Using n-Butyl Acetate Developer
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Solution Overview
Problem
The existing resist pattern forming methods for semiconductor chip manufacturing suffer from high pattern interval variation, which is not adequately suppressed by conventional chemical liquids used as developers or rinsing solutions.
Innovation Solution
A resist pattern forming method using a chemical liquid composed of n-butyl acetate and isobutyl acetate, where n-butyl acetate constitutes 99.000% to 99.999% of the chemical liquid by mass, and isobutyl acetate is present in the range of 1.0 to 1,000 mass ppm, along with optional additives like pentyl acetates, propionic acid butyl ester, butyl formate, and dibutyl ether.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional chemical liquids are used as developers or rinsing solutions, then the resist pattern can be formed, but the pattern interval variation is high and not adequately suppressed
Solution Approach 1:
The patent changes the chemical composition parameters of the developer/rinsing solution by specifying precise concentrations: n-butyl acetate at 99.000-99.999% by mass and isobutyl acetate at 1.0-1,000 mass ppm. This parameter optimization resolves the contradiction by achieving both low pattern interval variation and high pattern resolution through controlled chemical composition.
Solution Approach 2:
The patent uses a composite chemical liquid composed of multiple components (n-butyl acetate as main solvent and isobutyl acetate as additive) to achieve superior performance. This composite approach allows the solution to simultaneously suppress pattern interval variation and maintain high resolution, resolving the contradiction between manufacturing precision and reliability.
2Manufacturing precision
If the chemical liquid contains high purity n-butyl acetate, then the pattern interval variation is inhibited, but the manufacturing complexity increases due to precise composition control
Solution Approach 1:
The patent establishes specific parameter ranges for the chemical composition (n-butyl acetate: 99.000-99.999% by mass, isobutyl acetate: 1.0-1,000 mass ppm) that balance manufacturing precision with practical feasibility. These defined parameters resolve the contradiction by providing clear manufacturing targets that achieve low pattern interval variation without excessive complexity.
Solution Approach 2:
The patent employs a predominantly simple composition (over 99% n-butyl acetate) with a small but critical amount of isobutyl acetate additive. This partial action approach achieves high precision results while keeping the overall system relatively simple, resolving the contradiction between manufacturing precision and device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively inhibits pattern interval variation, improving the resolution and accuracy of resist patterns in semiconductor chip manufacturing.
Implementation Method 1
a step of forming a resist pattern by developing the exposed coating film by using a developer, in which the developer is a chemical liquid containing n-butyl acetate and isobutyl acetate
Data Source
AI summary
The present invention provides a resist pattern forming method which makes it possible to obtain a resist pattern while inhibiting pattern interval variation in a case where using a chemical liquid as a developer or rinsing solution. The chemical liquid in the resist pattern forming method according to an embodiment of the present invention contains n-butyl acetate and isobutyl acetate, in which a content of the n-butyl acetate is 99.000% to 99.999% by mass with respect to a total mass of the chemical liquid, and a content of the isobutyl acetate is 1.0 to 1,000 mass ppm with respect to the total mass of the chemical liquid.