Resist Patterning Method with Decay Inhibition
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Solution Overview
Problem
There is a trade-off between sensitivity, resolution, and line width roughness in resist materials, where increasing sensitivity decreases resolution and increases line width roughness, limiting the improvement of throughput in semiconductor device exposure processes.
Innovation Solution
A resist patterning method involving a resist layer formation, activation by an energy beam, decay inhibition, latent pattern image formation, and development, using a resist composition with a base resin and sensitizer precursor that produces a sensitizer with a first energy beam but not with a second energy beam, allowing for controlled acid generation and reduced exposure time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the sensitivity of a resist is increased, then the exposure time is reduced, but the resolution decreases and the line width roughness increases
Solution Approach 1:
The exposure process is divided into two distinct stages: an activating step that irradiates the resist layer with a first energy beam to generate active substances, and a latent pattern image forming step that irradiates with a second energy beam to form the final pattern. This segmentation allows each step to be optimized independently, achieving high sensitivity while maintaining resolution.
Solution Approach 2:
The activating step performs preliminary action by generating active substances in the resist layer before the actual pattern formation. These active substances enhance the resist's sensitivity to the second energy beam, allowing the latent pattern image to be formed more efficiently without sacrificing resolution.
2Productivity
If the sensitivity of a resist is increased, then the exposure time is reduced, but the line width roughness increases
Solution Approach 1:
By separating the exposure into activating and latent pattern image forming steps, the invention allows controlled generation of active substances that enhance sensitivity without introducing the random fluctuations that cause line width roughness. The structured two-step process ensures uniform activation across the resist layer.
Solution Approach 2:
The invention changes the chemical state of the resist layer by introducing active substances through the activating step. This parameter change (chemical composition) enhances sensitivity to the second energy beam while maintaining controlled and uniform response, thereby reducing line width roughness.
3Productivity
If a high-power light source is used to reduce exposure time, then the throughput is improved, but the device complexity and cost increase
Solution Approach 1:
The exposure process is segmented into two steps using different energy beams. The first activating step can use a lower-power source to generate active substances, while the second latent pattern image forming step uses a standard light source. This eliminates the need for high-power light sources, reducing device complexity and cost.
Solution Approach 2:
The active substances generated in the activating step act as intermediaries that enhance the resist's responsiveness to the second energy beam. This intermediary mechanism allows the use of lower-power light sources while still achieving fast exposure times, thereby reducing device complexity.
Data Source
AI summary
A resist patterning method according to the present invention includes: a resist layer forming step S101 of forming a resist layer (12) on a substrate (11); an activating step S103 of activating the resist layer by irradiation with an activating energy beam; a decay inhibiting step S105 of inhibiting decay of the activity of the resist layer; a latent pattern image forming step S107 of forming a latent pattern image in the activated resist layer by irradiation with a latent image forming energy beam; and a developing step S110 of developing the resist layer.