Metal-Containing Resist Plasma Patterning With In-Chamber ALE
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Solution Overview
Problem
Existing methods for patterning thin films on semiconductor substrates using extreme ultraviolet light (EUV) face challenges in efficiently forming and removing metal-containing films while maintaining the integrity of underlying films.
Innovation Solution
A substrate processing method involving the formation of a metal-containing film on a metal-containing resist film using ALD or CVD, followed by etching the residue with ALE, while also etching the underlying film, all within the same chamber, utilizing specific gases and plasma formation to control the process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a metal-containing film is formed on a metal-containing resist film using conventional methods, then the film formation process is simple, but the surface roughness of the formed film is poor and the underlying film may be damaged
Solution Approach 1:
The patent divides the film formation process into multiple sequential steps: first forming a metal-containing film on the resist film, then selectively removing portions of this film to create a patterned structure. This segmentation allows for better surface roughness control in each step while maintaining overall process manageability
Solution Approach 2:
The patent performs preliminary actions by first forming a complete metal-containing film covering the entire resist film surface before any patterning occurs. This preliminary film formation ensures uniform surface properties and prevents direct exposure of the underlying film to harsh etching conditions, thereby improving surface roughness while protecting sensitive layers
2Manufacturing precision
If the metal-containing film is removed using conventional etching methods, then the removal process is fast, but the underlying film is damaged and pattern precision is poor
Solution Approach 1:
The patent extracts the metal-containing film from the multi-layer structure through selective removal processes. By using specific etching conditions that target only the metal-containing film while sparing the underlying film, the method achieves high pattern precision without damaging sensitive underlying layers, even though this selective approach may reduce overall etching speed
Solution Approach 2:
The patent introduces an intermediary layer or protective mechanism between the etching process and the underlying film. This intermediary protects the underlying film from direct exposure to aggressive etching conditions, enabling precise pattern formation while preventing damage to the substrate, albeit at the cost of requiring additional process steps
3Manufacturing precision
If multiple processing steps are performed in separate chambers, then each process can be optimized independently, but the overall processing time increases and alignment precision decreases
Solution Approach 1:
The patent merges multiple processing steps including film formation, patterning, and selective removal into a single integrated chamber. This consolidation eliminates the need for substrate transfer between chambers, thereby improving alignment precision by maintaining consistent positioning while reducing total processing time through continuous operation
Solution Approach 2:
The patent designs a multi-functional processing chamber that can perform different operations (film deposition, etching, cleaning) sequentially without requiring physical reconfiguration or substrate removal. This universal chamber design achieves both high alignment precision through consistent substrate positioning and reduced processing time through uninterrupted operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively forms and removes metal-containing films, improves surface roughness, and etches underlying films, enhancing the precision and efficiency of semiconductor manufacturing processes.
Implementation Method 1
plasma formation to control the process
Data Source
AI summary
A substrate processing method includes (a) providing a substrate including an underlying film and a metal-containing resist film in which a pattern is formed on the underlying film; (b) forming a metal-containing film on a surface of the metal-containing resist film; and (c) removing a residue of the metal-containing film together with at least a part of the metal-containing film.